H5ANAG6NBJR-RDC vs H5ANAG6NBJR-PBC Comparison
Detailed side-by-side comparison of H5ANAG6NBJR-RDC by SK hynix and H5ANAG6NBJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5ANAG6NBJR-RDC | H5ANAG6NBJR-PBC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.60 | $6.45 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 16Gb x16 | — |
| Density | 16 Gb | 16 Gb (2 GB) |
| Data Rate | 2666 Mbps (speed grade -RDC) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| Interface | Synchronous, double data rate | — |
| Clocking | Fully synchronous to both clock edges | — |
| Package | FBGA (Ball Grid Array), surface mount | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Standard | JEDEC DDR4 SDRAM | — |
| Application | Main memory | — |
| Operating Temperature | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature] |
| On-Die Termination (ODT) | Supported (DDR4 feature) | — |
| Bank Group Architecture | DDR4 bank groups (per JEDEC DDR4) | — |
| RoHS Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS Status] |
| Supply Voltage | — | 1.2 V |
| Generation Max Data Rate | — | 3200 MT/s (family max) |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Speed Bin (PBC) | — | [DATA_NEEDED: Speed grade MT/s] |
| Organization | — | [DATA_NEEDED: Organization x16/x8] |