H5ANAG6NCJR-XN - 16Gb DDR4-3200 SDRAM FBGA-96 | SK hynix
MPN: H5ANAG6NCJR-XN ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $85.23 | $85.23 |
| 10 | $82 | $820.00 |
| 100 | $78.5 | $7,850.00 |
| 500 | $74.9 | $37,450.00 |
| 1,000 | $71.2 | $71,200.00 |
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View Datasheet →H5ANAG6NCJR-XN Maximum Ratings & Electrical Characteristics
| Memory Type | DDR4 SDRAM |
| Density | 16 Gbit (1G x 16) |
| Organization | 1G x 16 |
| Data Rate | 3200 Mbps/pin (DDR4-3200) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V |
| Package | FBGA-96 (96-ball) |
| Package Width | 8 mm |
| Mounting Type | Surface Mount (BGA) |
| Auto Self-Refresh | Yes |
| Auto Precharge | Yes |
| Asynchronous Reset | Yes |
| Data Mask (DM) | Yes |
| Dynamic On-Chip Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| CRC (Command/Address) | Yes |
| Write Leveling | Yes |
| Maximum Standby Current | 0.074 A (per Vyrian listing) |
| RoHS Status | Compliant |
H5ANAG6NCJR-XN 8 mm Pin Configuration Guide
Complete pinout information for H5ANAG6NCJR-XN (8 mm package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for H5ANAG6NCJR-XN.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5ANAG6NCJR-XN is suitable for 6 applications: Industrial Embedded Controllers, Embedded Computing Modules (COM/SOM), Networking and Communication Equipment, Test and Measurement Instrumentation, Firmware Boot and Embedded Logging Systems, DDR4 Memory Subsystem Replacement Sourcing.
Industrial Embedded Controllers
The H5ANAG6NCJR-XN fits industrial embedded controllers that require gigabytes of working memory with proven DDR4 reliability. Its 16Gb 1Gx16 organization lets a four-chip 64-bit channel reach 8GB with only four components, conserving board area in compact PLC and IPC form factors. The 1.14V~1.26V DDR4 rail reduces memory subsystem power versus DDR3, easing thermal design in sealed fanless enclosures, while auto self-refresh preserves RAM contents during suspend states used in industrial energy-saving modes. Dynamic ODT and ZQ calibration maintain signal integrity across the wide temperature swings typical of factory-floor cabinets. Place the DRAM within controlled-length fly-by routing of the SoC and re-characterize leveling at the DDR4-3200 target clock for the specific stackup.
Recommended
Embedded Computing Modules (COM/SOM)
Computer-on-modules and system-on-modules use one to four 16Gb x16 DDR4 components to deliver 2GB-8GB of soldered-down memory without SO-DIMM sockets, improving vibration tolerance for mobile and edge deployments. The H5ANAG6NCJR-XN's DDR4-3200 speed matches the memory controllers of modern ARM and x86 SoCs, and its x16 organization pairs naturally with 32-bit and 64-bit channel widths. The asynchronous reset function simplifies power-rail sequencing design across the module's multi-rail PMIC. Because memory is soldered, designers should validate a second source - the pin-compatible H5ANAG6NCJR-XNC or cross-vendor MT40A1G16TD-062E - through the SoC vendor's memory training suite before freezing the module BOM.
Recommended
Networking and Communication Equipment
Line cards, switches, and routers use deep packet buffers and large flow tables that demand high DRAM density per watt. The H5ANAG6NCJR-XN supplies 16Gb per component at DDR4-3200, and its CRC function protects the command/address bus in high-availability designs where an undetected command error would corrupt traffic state. The data-mask feature enables efficient partial writes when updating packet headers or table entries without read-modify-write cycles. With four devices per 64-bit channel, designers reach 8GB per channel with FBGA-96 footprints shared across the SK hynix 16Gb family, simplifying dual-source layouts. Terminate address/command nets per the fly-by topology and enable ODT values recommended in the SK hynix datasheet for 3200 Mbps operation.
Recommended
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require large acquisition memories to capture long records at high sample rates. The H5ANAG6NCJR-XN's 16Gb density per package allows multi-gigabyte capture buffers in a small footprint, and the DDR4-3200 interface sustains the sustained streaming bandwidth needed to offload acquisition data between trigger events. The ZQ calibration function keeps driver impedance accurate as the instrument's internal temperature rises during long captures, preserving eye margins at 3200 Mbps. Instruments benefit from the shared FBGA-96 footprint across the SK hynix 16Gb x16 family, letting memory-per-channel be scaled in later product revisions without PCB respin by populating variant suffixes validated in the instrument's controller QVL.
Recommended
Firmware Boot and Embedded Logging Systems
Distributor product descriptions position the H5ANAG6NCJR family for data storage, firmware boot, and embedded logging roles where in-system memory holds code-shadow and event logs. The auto self-refresh mode retains logged data through processor sleep transitions with standby current low enough (listed maximum standby 0.074 A) for battery-buffered logging nodes. The 16Gb x16 organization provides 2GB per chip, ample for shadow-copying bootloader and OS images during secure firmware update sequences, with the asynchronous reset function guaranteeing a known DRAM state after brown-out events. Design the logging system to retrain DDR4 after each reset, and store critical log pointers in non-volatile flash (e.g. SPI NOR such as the M25Q/N25Q family) alongside the DRAM buffer.
Recommended
DDR4 Memory Subsystem Replacement Sourcing
For boards already designed around 16Gb x16 DDR4-3200 in FBGA-96, the H5ANAG6NCJR-XN serves as a replacement or extension component when original memory sources become constrained. Its footprint and organization match the other SK hynix 16Gb x16 variants (H5ANAG6NCJR-XNC, H5ANAG6NCMR-XNC), enabling drop-in population on existing land patterns. Replacement sourcing still demands re-running the memory controller's training and qualification sequence, because DRAM vendors revise dies and refresh configurations across generations. Verify the suffix meaning (speed bin and temperature grade) against the SK hynix part-number key, purchase from franchised or traceable distributors such as LCSC or Octopart-listed channels, and retain date-code traceability for quality-managed production environments.
Recommended
Recommended Products Summary
Engineering reference data for H5ANAG6NCJR-XN — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5ANAG6NCJR-XNC | H5ANAG6NCMR-XNC | H5ANAG6NCR-UHC | MT40A1G16TD-062E |
|---|---|---|---|---|---|
| Package | FBGA-96 (96-ball) | FBGA-96 - same | FBGA-96 - same | FBGA-96 - same | FBGA-96 (comparable footprint) |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | Micron Technology |
| Density | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit | 16 Gbit |
| Organization | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 | 1G x 16 |
| Data Rate | 3200 Mbps/pin (DDR4-3200) | 3200 Mbps/pin | [DATA_NEEDED] | [DATA_NEEDED] | DDR4-3200 (062 speed grade) |
| Supply Voltage | 1.14 V - 1.26 V | 1.14 V - 1.26 V | 1.14 V - 1.26 V | 1.14 V - 1.26 V | 1.2 V nominal DDR4 |
| Feature Set (ODT/ZQ/CRC/Write Leveling) | All supported | All supported | All supported | All supported | All supported |
| Reference Price (qty 1) | $85.23 (as of 2026-09-05) | from $84.97 (LCSC, as of 2026-09-05) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Maximum density in the SK hynix DDR4 x16 lineup (vs H5AN8G6NCJR-UHC)
- DDR4-3200 top speed bin (-XN family) (vs H5ANAG6NCMR-XNC)
- Same-family second sourcing on identical FBGA-96 footprint (vs MT40A1G16TD-062E)
Design Notes
Route the DDR4-3200 address/command bus in fly-by topology from the controller through each DRAM component, with length-matched clock and strobe pairs. At 3200 Mbps the eye is narrow: keep all data-group skews within controller spec, reference signals to continuous ground planes, and enable dynamic ODT plus write leveling during memory training. Use the SK hynix datasheet IBIS models for pre-layout simulation of the 1.2V signaling environment before freezing the stackup.
The device operates at a nominal 1.2V rail with a permitted 1.14V-1.26V window; select a DDR4 PMIC (with VPP 2.5V rail support as required by the DDR4 standard) and verify sequencing between VDD, VPP, and VDDQ per the SK hynix power-up procedure, using the asynchronous reset input to hold the device in reset until rails stabilize. Budget for the listed 0.074 A standby maximum when sizing power for suspend states, and decouple each rail with a bulk capacitor plus local 0.1uF ceramics at each ball group.
The most frequent failure with 16Gb dies is configuring the controller for an 8Gb address map, which produces aliased addressing or training failure - confirm the SoC memory controller supports 16Gb row/column decode before layout. The ZQ ball needs its own 240-ohm 1% resistor to ground per device, placed close to the ball and never shared. Finally, suffixes within the H5ANAG6 family encode speed and temperature options; always verify the exact suffix meaning against the SK hynix part-number decoder before qualifying a second source.
Compliance Information
RoHS compliance confirmed via JLCPCB/LCSC listings. REACH, halogen-free, and conflict-minerals status not stated in retrieved data - request SK hynix environmental declarations.
