H5ANAG6NCJR-XNC vs H5ANAG6NCMR-XNI Comparison
Detailed side-by-side comparison of H5ANAG6NCJR-XNC by SK hynix and H5ANAG6NCMR-XNI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5ANAG6NCJR-XNC | H5ANAG6NCMR-XNI |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $84.97 | $4.95 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Memory Size | 16 Gbit | 16 Gb |
| Memory Organization | 1G x 16 | 1G x 16 |
| Data Rate | 3200 Mbps/pin | 3200 Mbps (DDR4-3200, XN speed bin) |
| Supply Voltage Range | 1.14 V to 1.26 V (VDD/VDDQ) | — |
| Interface | Parallel | Parallel (DDR4) |
| Package | FBGA-96 | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Packaging | Tray | — |
| RoHS Status | Compliant | — |
| Supply Voltage | — | 1.2 V |
| Technology | — | CMOS Double Data Rate IV Synchronous DRAM |
| Power Class | — | Normal Power |
| Product Status | — | Active |
| Application Domain | — | Main memory, industrial controllers, computing modules, consumer electronics |
| Memory Format | — | DRAM |
| Speed Bin Family | — | UH/VK/WM/XN |
| Operating Temperature | — | [DATA_NEEDED: Operating Temperature] |
| VPP Supply Voltage | — | [DATA_NEEDED: VPP Supply Voltage] |
| MSL Level | — | [DATA_NEEDED: MSL Level] |