H5ANAG6NCMR-XNC vs MT40A1G16TD-062E Comparison

Detailed side-by-side comparison of H5ANAG6NCMR-XNC by SK hynix and MT40A1G16TD-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5ANAG6NCMR-XNC H5ANAG6NCMR-XNC - 16Gb DDR4 SDRAM x16 FBGA-96 | SK Hynix

H5ANAG6NCMR-XNC - 16Gb DDR4 SDRAM x16 FBGA-96 | SK Hynix

H5ANAG6NCMR-XNC ✓ Active
Micron Technology
MT40A1G16TD-062E MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E - 16Gb DDR4-3200 x16 SDRAM FBGA | Micron

MT40A1G16TD-062E ✓ Active

Specification Comparison

Parameter H5ANAG6NCMR-XNC MT40A1G16TD-062E
Brand SK hynix Micron Technology
Category Memory ICs DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $31.40 $18.41
Memory Type DDR4 SDRAM (Volatile DRAM) DDR4 SDRAM
Memory Size 16 Gb 16 Gbit
Memory Organization 1G x 16 —
Data Rate 3200 Mbps/pin —
Supply Voltage (VDD) 1.2 V —
Technology CMOS —
Power Class Normal Power —
Interface Parallel POD12 (1.2V pseudo open-drain)
Speed Grade XN (3200) -062E
Package FBGA-96 96-ball FBGA (7.5 x 13 mm)
Mounting Type Surface Mount Surface Mount
Product Status Active —
RoHS Status RoHS Compliant —
Operating Temperature [DATA_NEEDED: operating temperature range] TC maximum up to 95 C
Refresh [DATA_NEEDED: refresh rate] 8192-cycle, 64 ms up to 85C; 32 ms from 85C to 95C
CAS Latency [DATA_NEEDED: CAS latency at 3200] —
MSL Level [DATA_NEEDED: moisture sensitivity level] —
Organization — 1G x 16
Clock Frequency — 1.6 GHz
Access Time — 19 ns
VDD Supply Voltage — 1.2 V +/- 60 mV
VDDQ Supply Voltage — 1.2 V +/- 60 mV
VPP Supply Voltage — 2.5 V, -125 mV, +250 mV
Bank Architecture — 8 banks (x16 configuration)
VREFDQ — On-die, internal, adjustable generation
Product Line Suffix — AAT:F (automotive AEC grade available per Micron catalog)

Datasheets & Resources

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