H5TC4G63MFR-PBA vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of H5TC4G63MFR-PBA by SK hynix and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5TC4G63MFR-PBA
H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
H5TC4G63MFR-PBA β ActiveMicron Technology
MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125 β ActiveSpecification Comparison
| Parameter | H5TC4G63MFR-PBA | MT41K256M16HA-125 |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $6.36 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | β |
| Organization | 256M x 16 | β |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | β |
| Data Rate | 1866 Mbps (PC3L-14900) | β |
| Package | 96-ball FBGA | 96-FBGA (9x14 mm) |
| Number of Banks | 8 | β |
| Burst Length | BL8, BL4 (with burst chop) | β |
| CAS Latency (CL) | Programmable | β |
| CAS Write Latency (CWL) | Programmable | β |
| Additive Latency | Programmable | β |
| On-Die Termination (ODT) | Yes | β |
| ZQ Calibration | Yes | β |
| Write Leveling | Yes | β |
| Auto Self-Refresh | Yes | β |
| Temperature-Compensated Self-Refresh | Yes | β |
| Process Technology | 30nm-class | β |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | β |
| Memory Size | β | 4Gbit (256M x 16) |
| Data Bus Width | β | 16 bit |
| Clock Frequency | β | 800 MHz |
| Access Time | β | 13.75 ns |
| Supply Voltage | β | 1.35 V |
| Number of Pins | β | 96 |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | [DATA_NEEDED: operating temperature range] |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Logic Family | β | CMOS |
| Refresh Interval | β | 7.8 us at 85C |
| CAS Latency | β | 11 |