H5TC4G63MFR-PBA vs MT41K256M16HA-125 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63MFR-PBA sa pamamagitan ng SK hynix at MT41K256M16HA-125 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | H5TC4G63MFR-PBA | MT41K256M16HA-125 |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $6.36 |
| Uri ng Memory | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasyon | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | — |
| Packhaging | 96-ball FBGA | 96-FBGA (9x14 mm) |
| Number of Banks | 8 | — |
| Burst Length | BL8, BL4 (with burst chop) | — |
| CAS Latency (CL) | Programmable | — |
| CAS Write Latency (CWL) | Programmable | — |
| Additive Latency | Programmable | — |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Temperature-Compensated Self-Refresh | Yes | — |
| Process Technology | 30nm-class | — |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) | — |
| Laki ng Memory | — | 4Gbit (256M x 16) |
| Width ng Data Bus | — | 16 bit |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 13.75 ns |
| Volte ng Pagbibigay | — | 1.35 V |
| Bilang ng Pins | — | 96 |
| Uri ng Pagpapasok | — | Surface Mount |
| Temperature na Operasyon | — | [DATA_NEEDED: operating temperature range] |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |
| Latensya ng CAS | — | 11 |