H9JCNNNBK3MLYR-N6E-SK vs H9JCNNNBK3MLYR-N6E Comparison

Detailed side-by-side comparison of H9JCNNNBK3MLYR-N6E-SK by SK hynix and H9JCNNNBK3MLYR-N6E by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H9JCNNNBK3MLYR-N6E H9JCNNNBK3MLYR-N6E - 16Gb LPDDR5-6400 SDRAM | SK Hynix

H9JCNNNBK3MLYR-N6E - 16Gb LPDDR5-6400 SDRAM | SK Hynix

H9JCNNNBK3MLYR-N6E ✓ Active

Specification Comparison

Parameter H9JCNNNBK3MLYR-N6E-SK H9JCNNNBK3MLYR-N6E
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $20.85 $24.37
Memory Type Volatile - DRAM (LPDDR5 SDRAM) LPDDR5 SDRAM
Density 16 Gb (2 GB) 16 Gb (2 GB)
Organization 512M x 32 512M x 32
Data Rate 6400 Mbps (LPDDR5-6400) 6400 Mbps per pin
Bus Width 16-bit —
Channel Architecture Dual-channel (per datasheet family) —
VDD (Core Supply) 1.05 V (range 1.01 V to 1.12 V) —
VDDQ (I/O Supply) 1.8 V (range 1.7 V to 1.95 V) —
Operating Temperature -55C to +125C [DATA_NEEDED: operating temperature range]
Package 315-ball TFBGA (12 x 12 mm) TFBGA-315
Mounting Type Surface Mount Surface Mount
JEDEC Standard JESD209-5 (LPDDR5) —
On-die ECC Yes (per LPDDR5 base spec) —
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level]
Supply Voltage (VDD2) — 1.05 V
Supply Voltage (VDD1) — [DATA_NEEDED: VDD1 rail voltage]
Supply Voltage (VDDQ) — [DATA_NEEDED: VDDQ rail voltage]
Number of Channels — Dual channel (x16 + x16)
Memory Technology — DRAM (volatile)
Refresh Mode — [DATA_NEEDED: refresh mode support]
On-Die Termination — [DATA_NEEDED: ODT support]
Bank Architecture — [DATA_NEEDED: bank group configuration]

Datasheets & Resources

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