IAUA180N04S5N012AUMA1 vs IAUCN04S7N037GATMA1 Perbandingan
Perbandingan bersamaan detil IAUA180N04S5N012AUMA1 dari Infineon dan IAUCN04S7N037GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUA180N04S5N012AUMA1 - 40V 180A OptiMOS-5 N-MOSFET | Infineon
IAUA180N04S5N012AUMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUA180N04S5N012AUMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUA180N04S5N012AUMA1 | — |
| Series | OptiMOS-5 40 V | OptiMOS 7 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 180 A (Tc) | — |
| Maximum Power Dissipation (PD) | 125 W (Tc) | — |
| R_DS(on) (max) | 1.2 mΩ at 10 V VGS | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Paket | PG-HSOF-5-2 (sTOLL, MO-319A / HSOF-5), 7x8 mm² | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Tipe Mounting | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Rentang Suhu Kerja | -55 °C to +175 °C (Tj) | [DATA_NEEDED: junction/ambient temperature limits] |
| Technology | OptiMOS-5 Trench | Trench MOSFET, N-Channel |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Level MSL | — | [DATA_NEEDED: MSL level] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |