IAUT300N08S5N011ATMA1 - 80V N-Ch 1.1mOhm Automotive MOSFET
MPN: IAUT300N08S5N011ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.85 | $7.85 |
| 10 | $7.2 | $72.00 |
| 100 | $6.4 | $640.00 |
| 500 | $5.85 | $2,925.00 |
| 1,000 | $5.4 | $5,400.00 |
Drop-in alternatives for IAUT300N08S5N011ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IAUT300N08S5N012ATMA2
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$2.2 / Unit
View Datasheet →IAUT300N08S5N011ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | 80 V |
| Continuous Drain Current (I_D, T_C=25C) | 300 A |
| Pulsed Drain Current (I_DM) | 410 A (Tj) |
| R_DS(on) max | 1.10 mOhm at V_GS=10 V |
| Gate Threshold Voltage (V_GS(th)) | 3.8 V |
| Total Gate Charge (Q_g) | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | 16.25 nF |
| Output Capacitance (C_oss) | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | 130 pF |
| Power Dissipation (P_D) | 375 W at T_C=25C |
| Operating Temperature Range | -55C to +175C |
| Package | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| Qualification | Automotive (AEC-Q101) |
IAUT300N08S5N011ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (G) |
| Pin 2 | Drain — Drain tab / thermal pad (D) |
| Pin 3 | Drain — Drain tab / thermal pad (D) |
| Pin 4 | Drain — Drain tab / thermal pad (D) |
| Pin 5 | Source — Source connection (S) |
| Pin 6 | Source — Source connection (S) |
| Pin 7 | Source — Source connection (S) |
| Pin 8 | Source — Source connection (S) |
Safe Operating Area (DC, T_C=25C)
Typical Applications
IAUT300N08S5N011ATMA1 is suitable for 6 applications: 48V Mild-Hybrid Inverter Power Stage, 48V-to-12V DC-DC Converter, Electric Power Steering (EPS), Battery Management System Disconnect Switch, BLDC Motor Drive for E-Mobility, Industrial High-Current Switching.
48V Mild-Hybrid Inverter Power Stage
The IAUT300N08S5N011ATMA1's 80 V V_DS rating, 300 A continuous current, and 1.10 mOhm R_DS(on) directly suit the main inverter of 48 V mild-hybrid electric vehicles. It switches the traction motor windings at high frequency with minimum conduction loss, improving overall drive-cycle efficiency and reducing battery drain. The AEC-Q101 automotive qualification and PG-HSOF-8-1 (TOLL 10x12) surface-mount package with low thermal resistance allow PCB-mount integration at the inverter housing without elaborate cooling. Designers typically parallel two devices per phase to halve conduction loss and share the 410 A pulsed surge.
Recommended
48V-to-12V DC-DC Converter
Buck or buck-boost converters stepping 48 V down to 12 V for legacy 12 V automotive loads benefit from the IAUT300N08S5N011ATMA1's low 1.10 mOhm on-resistance and 80 V rating. Placed in the high-side switch position, the device sustains continuous current up to 300 A at moderate switching frequencies (50-200 kHz), enabling high power density (>4 kW/L) converter modules. The 231 nC total gate charge balances switching loss against conduction loss. Designers should follow Infineon's PG-HSOF-8-1 PCB layout for the copper thermal pad, which keeps junction temperature in check at sustained >200 A loads.
Recommended
Electric Power Steering (EPS)
Electric power steering units require a robust, AEC-Q101-qualified MOSFET for the BLDC motor inverter that drives the steering rack. The IAUT300N08S5N011ATMA1's 300 A continuous current rating handles peak EPS assist loads during parking maneuvers, while the 1.10 mOhm R_DS(on) minimizes heat dissipation in the engine bay. The PG-HSOF-8-1 (TOLL 10x12) surface-mount package integrates cleanly onto the EPS ECU PCB, and its -55C to +175C operating temperature range covers under-hood thermal extremes. Harsh-vibration robustness comes from the package's bottom-source thermal pad and large solderable leads.
Recommended
Battery Management System Disconnect Switch
In 48 V battery management systems (BMS), the IAUT300N08S5N011ATMA1 serves as a high-current solid-state disconnect switch between the lithium-ion pack and the vehicle bus. Its 80 V abs-max comfortably exceeds typical 48 V working voltage, and its 300 A continuous current handles peak regen-braking inrush. The 1.10 mOhm R_DS(on) keeps voltage drop below 330 mV at 300 A, preserving pack-to-bus efficiency. Bidirectional current flow (N-channel inherent body diode) simplifies the protection topology. AEC-Q101 and -55C to +175C ratings cover automotive under-hood conditions.
Recommended
BLDC Motor Drive for E-Mobility
Brushless DC motor drives in e-mobility applications - electric water pumps, oil pumps, HVAC blowers, and cooling fans - use the IAUT300N08S5N011ATMA1 in a three-phase inverter topology. The 80 V rating handles inductive flyback comfortably, while 300 A continuous and 410 A pulsed current supports the locked-rotor inrush of pump and blower motors. The 1.10 mOhm R_DS(on) keeps the inverter cold at high duty cycles, extending motor winding life. PG-HSOF-8-1 (TOLL 10x12) surface-mount packaging supports automated PCB assembly at automotive OEM scale.
Recommended
Industrial High-Current Switching
Beyond automotive, the IAUT300N08S5N011ATMA1 fits industrial high-current switching such as 48 V telecom battery backup, server-rack 48 V distribution, and large-format lithium battery pack disconnects. Its 80 V abs-max and 300 A continuous current enable >20 kW load switching in a single device, reducing parts count. The 1.10 mOhm R_DS(on) minimizes conduction loss and bus voltage drop, while PG-HSOF-8-1 (TOLL) PCB-mount packaging simplifies thermal management. Operating junction temperature up to 175C suits industrial cabinet environments.
Recommended
Recommended Products Summary
Engineering reference data for IAUT300N08S5N011ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUT300N08S5N012ATMA2 | BSC052N08NS5ATMA1 | BSZ110N08NS5ATMA1 | BSC117N08NS5ATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-HSOF-8-1 (TOLL 10x12) | PG-HSOF-8-1 (TOLL 10x12) | PG-TSDSON-8 (5x6) | PG-TSDSON-8 (5x6) | PG-TSDSON-8 (5x6) | PG-TSDSON-8 (5x6) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| V_DS max | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| Continuous Drain Current (T_C=25C) | 300 A | 300 A | 50 A | ~30 A | ~25 A | ~40 A |
| R_DS(on) max at V_GS=10V | 1.10 mOhm | 1.10 mOhm | 5.2 mOhm | 1.8 mOhm | 3.0 mOhm | 2.3 mOhm |
| Total Gate Charge Q_g | 231 nC | 231 nC | 39 nC | 85 nC | 105 nC | 55 nC |
| Power Dissipation | 375 W | 375 W | 139 W | 138 W | 139 W | 125 W |
| Automotive Qualified (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
| Operating Temperature | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
Key Differentiators
- Industry-lowest 1.10 mOhm R_DS(on) at 80 V in TOLL package (vs BSC052N08NS5ATMA1)
- Same-family pin compatibility for parallel operation (vs IAUT300N08S5N012ATMA2)
- AEC-Q101 automotive qualified with MSL 1 (vs BSZ110N08NS5ATMA1)
Design Notes
At 300 A continuous drain current in a 48 V automotive inverter, power dissipation reaches approximately 99 W at full load (I^2 x R_DS(on) = 300^2 x 0.0011 = 99 W). The PG-HSOF-8-1 (TOLL 10x12) package requires a substantial copper thermal pad (>= 25 mm^2 top + bottom layer with thermal vias) to keep junction rise below 100 C. Estimated: at T_A=85C and R_thJA ~= 0.4 C/W with proper layout, junction stays near 125C at 99 W, within the 175C max. Below 100 A continuous the device can run without forced-air cooling if the PCB copper pad is sized per Infineon AN-2020-001.
Layout for the PG-HSOF-8-1 (TOLL) footprint is critical. Place multiple thermal vias (>= 0.3 mm diameter, 1.0 mm pitch) directly under the central drain tab to the inner copper layers. Keep the high-current source copper (pins 5-8) as wide and short as possible to minimize parasitic inductance. Use a Kelvin-source connection by routing pin 5 separately back to the gate-driver GND to prevent source-inductance-induced gate ringing.
Gate-drive loop inductance must be minimized to limit dv/dt-induced ringing on the gate. Use a 10 Ohm gate-source resistor (R_G) plus a 100 kohm pull-down resistor from gate to source to keep the device off during start-up. The 231 nC total gate charge requires a peak gate current of ~500 mA at 1 A driver strength - use a dedicated gate-driver IC such as the 1EDB7275FXUMA1 rather than a logic-level output.
Do not exceed V_GS=+/-20 V absolute maximum, even transiently. Always place a 100 kohm pull-down on the gate so the device stays off if the gate-driver fails open. Watch for body-diode reverse-recovery (Q_rr) in bridge-tie configurations; the OptiMOS 5 process mitigates this but synchronous-rectifier dead-time still needs to be tuned.
Compliance Information
AEC-Q101 automotive qualified (AEC-Q100 family for MOSFETs). MSL 1 rated per distributor data. RoHS and halogen-free compliance per Infineon product page. REACH compliance confirmed via DigiKey listing.
