IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
MPN: IAUC100N04S6N015ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.95 | $950.00 |
| 5,000 | $0.78 | $3,900.00 |
Drop-in alternatives for IAUC100N04S6N015ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC100N04S6N015
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IAUC100N08S5N043ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.72 / Unit
View Datasheet →IAUCN04S7N006ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.95 / Unit
View Datasheet →IAUC60N06S5L073ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.41 / Unit
View Datasheet →IAUC100N04S6N015ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-6 40V |
| Technology | N-Channel Trench MOSFET |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A |
| Power Dissipation (P_D @ T_C=25C) | 100 W |
| R_DS(on) max @ V_GS=10V | 1.5 mΩ (typical, per Infineon product page) |
| Gate-Source Voltage (V_GS) max | ±20 V |
| Operating Temperature Range | -55 C to +175 C (junction, typical) |
| Package | PG-TDSON-8 (SSO8) 5x6 mm |
| Mounting Type | Surface Mount |
| MSL Level | 1 (unlimited floor life) |
| Automotive Qualification | AEC-Q101 |
| RoHS Compliance | Compliant |
| Lead-Free | Yes |
IAUC100N04S6N015ATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (V_GS) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Source — Source connection |
| Pin 5 | Drain (tab) — Drain connection and exposed thermal pad |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
Safe Operating Area (DC)
Typical Applications
IAUC100N04S6N015ATMA1 is suitable for 6 applications: Automotive 12V/24V High-Current Load Switch, Electric Power-Steering (EPS) Motor Drive, Synchronous Rectifier in 48V-to-12V DC-DC Buck Converter, Battery Disconnect / Pyrotechnic Switch Backup, Industrial High-Current Solenoid / Valve Driver, Hot-Swap / Inrush-Current Limiter.
Automotive 12V/24V High-Current Load Switch
The IAUC100N04S6N015ATMA1's 40 V V_DS rating and 1.5 mΩ typical R_DS(on) at V_GS=10V make it ideal for high-current body-electronics load switching on the 12V/24V automotive bus. With 100 A continuous drain current and 100 W power dissipation, it can replace electromechanical relays for switched-power loads such as headlamp modules, seat heaters, and trailer-power outlets. The AEC-Q101 qualification ensures reliability underhood where ambient temperatures routinely exceed 105 °C. Placed between the battery feed and the load with V_GS=10V from a smart-MOS gate driver, conduction loss at 50 A is only P=I²×R_DS(on)=3.75 W, dramatically lower than a relay's contact losses. The PG-TDSON-8 footprint also enables smaller PCB area than legacy DPAK switches.
Recommended
Electric Power-Steering (EPS) Motor Drive
The IAUC100N04S6N015ATMA1 is well-suited as the high-current switching element in 3-phase brushless-DC motor drives for electric power-steering systems. Its 100 A continuous drain current at T_C=25 °C handles the peak torque demands of EPS motors during parking maneuvers, while the 1.5 mΩ R_DS(on) keeps I²R conduction losses under 3.75 W at 50 A - critical for ECU thermal budgets. The AEC-Q101 stress-test qualification ensures operation across -40 °C to +150 °C ambient with the reliability demanded for fail-operational steering. Placed in the three-phase inverter bridge with V_GS=10V gate drive from a 3-phase driver IC, the low R_DS(on) preserves battery runtime and reduces heat-sink mass versus DPAK alternatives.
Recommended
Synchronous Rectifier in 48V-to-12V DC-DC Buck Converter
In secondary-side synchronous-rectifier positions of 48V-to-12V (or 24V-to-12V) buck converters, the IAUC100N04S6N015ATMA1's 1.5 mΩ R_DS(on) and 40 V V_DS rating make it ideal when the input bus stays below ~36V at all times. The OptiMOS-6 trench technology delivers low Q_g for reduced switching loss at high switching frequencies (200-500 kHz), enabling higher power density than older OptiMOS-3 generations. Placed on the low-side of the synchronous-rectifier node with V_GS driven by a synchronous-rectifier controller IC, the device sustains 100 A continuous at T_C=25 °C, supporting 1.2 kW converter designs. The PG-TDSON-8 footprint drains heat directly into the PCB copper pour, eliminating the heatsink.
Recommended
Battery Disconnect / Pyrotechnic Switch Backup
The IAUC100N04S6N015ATMA1 can serve as a solid-state battery-disconnect switch in mild-hybrid and 12V start-stop vehicles, where it provides fail-safe isolation in parallel with the pyrotechnic battery-disconnect unit. Its 40 V V_DS rating covers 12V/24V lead-acid transients, and the 100 A continuous rating handles inrush from active loads during re-connect events. The AEC-Q101 qualification provides the automotive reliability required for safety-critical isolation. Placed in series with the battery feed with V_GS controlled by an isolated gate driver, the device's 1.5 mΩ R_DS(on) keeps steady-state voltage drop under 150 mV at 100 A - acceptable for most chassis loads.
Recommended
Industrial High-Current Solenoid / Valve Driver
Beyond automotive, the IAUC100N04S6N015ATMA1 is excellent for industrial solenoid drivers, hydraulic valve controllers, and high-current PWM dimmers in factory automation. Its 40 V V_DS rating handles 24V industrial bus rails, and the 1.5 mΩ R_DS(on) minimizes heat dissipation in continuous-duty solenoid-hold applications where the coil sees 5-10 A steady-state. The PG-TDSON-8 footprint allows compact PCB designs in DIN-rail and panel-mount enclosures. Placed as a low-side switch with V_GS driven by a 10V gate driver and a 10 kΩ gate-source pull-down resistor for dV/dt immunity, the device provides reliable 100 A switching in PWM frequency ranges up to 50 kHz.
Recommended
Hot-Swap / Inrush-Current Limiter
In 12V/24V telecom and server hot-swap controllers, the IAUC100N04S6N015ATMA1 serves as the series pass-element that limits inrush current when a board is plugged into a live backplane. Its 40 V V_DS rating covers 24V telecom battery plants, and the 1.5 mΩ R_DS(on) keeps steady-state voltage drop under 75 mV at 50 A - acceptable for most server point-of-load converters. The AEC-Q101 grade (even though telecom is non-automotive) provides additional thermal-cycling margin. Placed between the backplane feed and the downstream bulk capacitors with V_GS controlled by a hot-swap controller IC, the device delivers safe inrush profiles and reliable steady-state current.
Recommended
Recommended Products Summary
Engineering reference data for IAUC100N04S6N015ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC100N04S6N015 | IAUC100N08S5N043ATMA1 | IAUCN04S7N006ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 (SSO8) 5x6 mm | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same | PG-TDSON-8 (5x6 mm) - same |
| Drain-Source Voltage (V_DS) | 40 V | 40 V | 80 V | 40 V | 60 V |
| Continuous Drain Current (I_D @ T_C=25C) | 100 A | 100 A | 100 A | [DATA_NEEDED] | 60 A |
| R_DS(on) typ @ V_GS=10V | 1.5 mΩ | 1.5 mΩ | 4.3 mΩ | 0.6 mΩ | 7.3 mΩ |
| Power Dissipation (P_D @ T_C=25C) | 100 W | 100 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Approx. Price @ qty 1000 | $0.95 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry's lowest R_DS(on) in PG-TDSON-8 (5x6 mm) for 40V class (vs IAUC100N08S5N043ATMA1)
- Optimized for 12V/24V automotive with AEC-Q101 grade (vs IAUC60N06S5L073ATMA1)
- Drop-in compatible with newer ultra-low-R_DS(on) generations (vs IAUCN04S7N006ATMA1)
Design Notes
Estimated: at I_D=50 A continuous with R_DS(on)=1.5 mΩ, conduction loss is P=I²×R=50²×0.0015=3.75 W. The PG-TDSON-8 (SSO8) package has a typical theta_JC of ~1.0 C/W, giving a junction temperature rise of 3.75 C above the case - negligible for normal operation. However, PCB thermal design dominates steady-state T_J: a 1 square-inch copper pour under the drain tab achieves theta_JA ~50 C/W, allowing up to ~2.5 W dissipation at 85 °C ambient before T_J exceeds 150 °C. For higher dissipation, expand the drain copper or use thermal vias to inner copper planes.
Place the gate driver within 10 mm of the gate pin to minimize parasitic inductance that causes gate-oscillation and unwanted turn-on events. Add a 10 kΩ gate-source resistor directly at the gate pin to provide a defined pull-down path during transient dV/dt events - this prevents Miller-effect-induced turn-on in half-bridge configurations. Use a 4-layer PCB with a dedicated ground plane adjacent to the source pads; the SSO8's multiple source pins must all be soldered with thermal vias to the inner ground plane to minimize source inductance.
Do NOT use V_GS=4.5 V (logic-level) drive on this part - the IAUC100N04S6N015ATMA1 is a standard 10V-drive OptiMOS-6 device, and using logic-level V_GS will leave the MOSFET in the linear region with R_DS(on) 3-5x higher than spec, causing excessive heat. Always confirm V_GS(th) from the datasheet before choosing a gate driver. Also, do not exceed V_GS=±20 V - lower V_GS spikes from gate-driver bootstraps can puncture the gate oxide.
Compliance Information
RoHS compliant per DigiKey listing; AEC-Q101 automotive-qualified per Microchip USA and partgenie.ai listings; MSL 1 (unlimited floor life). REACH and halogen-free status not explicitly stated in available data - marked unknown.
