IAUC100N04S6N022ATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of IAUC100N04S6N022ATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC100N04S6N022ATMA1

IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 βœ“ Active
Infineon
BSC019N04LSTATMA1

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 βœ“ Active

Specification Comparison

Parameter IAUC100N04S6N022ATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $1.21
Technology OptiMOS 6, N-Channel MOSFET OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (V_DSS) 40 V β€”
Continuous Drain Current (I_D, Tc) 100 A β€”
Power Dissipation (P_D, Tc) 75 W β€”
R_DS(on) (typ at V_GS=10V) 2.2 mOhm β€”
Package PG-TDSON-8 (5x6 mm) leadless TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55 C to +150 C
Polarity N-Channel enhancement mode β€”
Automotive Qualification AEC-Q100 (IAUC family) β€”
Pin Count 8 β€”
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] β€”
Total Gate Charge Q_g [DATA_NEEDED: total gate charge] β€”
MSL Level 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tc=25C) β€” 161 A
Continuous Drain Current (ID, Ta=25C) β€” 28 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V β€” 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ β€” 1.7 V
Total Gate Charge Qg typ β€” 85 nC
Power Dissipation PD (Tc=25C) β€” 94 W
Lead-Free / Halogen-Free β€” Yes / Yes
Avalanche Rated β€” Yes

Datasheets & Resources

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