IAUC100N04S6N022ATMA1 vs BSC019N04LSTATMA1 Perbandingan
Perbandingan bersamaan detil IAUC100N04S6N022ATMA1 dari Infineon dan BSC019N04LSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUC100N04S6N022ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | OptiMOS 6, N-Channel MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | — |
| Paket | PG-TDSON-8 (5x6 mm) leadless | TDSON-8 (SuperSO8) 5x6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +175C (junction) | -55 C to +150 C |
| Polarity | N-Channel enhancement mode | — |
| Automotive Qualification | AEC-Q100 (IAUC family) | — |
| Jumlah Pin | 8 | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | — |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 161 A |
| Continuous Drain Current (ID, Ta=25C) | — | 28 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | 1.7 V |
| Total Gate Charge Qg typ | — | 85 nC |
| Power Dissipation PD (Tc=25C) | — | 94 W |
| Lead-Free / Halogen-Free | — | Yes / Yes |
| Avalanche Rated | — | Yes |