IAUC100N04S6N022ATMA1 vs BSC019N04LSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N04S6N022ATMA1 disebabkan oleh Infineon dan BSC019N04LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC100N04S6N022ATMA1 IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N022ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC100N04S6N022ATMA1 BSC019N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 6, N-Channel MOSFET OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (V_DSS) 40 V —
Continuous Drain Current (I_D, Tc) 100 A —
Power Dissipation (P_D, Tc) 75 W —
R_DS(on) (typ at V_GS=10V) 2.2 mOhm —
Kemasan PG-TDSON-8 (5x6 mm) leadless TDSON-8 (SuperSO8) 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +175C (junction) -55 C to +150 C
Polarity N-Channel enhancement mode —
Automotive Qualification AEC-Q100 (IAUC family) —
Kiraan Pin 8 —
Gate Threshold V_GS(th) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge Q_g [DATA_NEEDED: total gate charge] —
Aras MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Status RoHS Compliant Compliant
Lead-Free Yes —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

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