IAUC100N04S6N022ATMA1 vs IPC100N04S5L1R5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N04S6N022ATMA1 sa pamamagitan ng Infineon at IPC100N04S5L1R5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC100N04S6N022ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6N022ATMA1 ✓ NakahandaInfineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC100N04S6N022ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 6, N-Channel MOSFET | — |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Power Dissipation (P_D, Tc) | 75 W | — |
| R_DS(on) (typ at V_GS=10V) | 2.2 mOhm | — |
| Packhaging | PG-TDSON-8 (5x6 mm) leadless | PG-TDSON-8-34 (SS08 leadless) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55C to +175C |
| Polarity | N-Channel enhancement mode | — |
| Automotive Qualification | AEC-Q100 (IAUC family) | — |
| Bilang ng Pin | 8 | — |
| Gate Threshold V_GS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge Q_g | [DATA_NEEDED: total gate charge] | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | MSL1 (260C peak reflow) |
| Tindminan RoHS | Compliant | Compliant (Green Product) |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-5 40 V |
| Polarity / Channel Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | — | 40 V |
| Gate-Source Voltage (VGS) Max | — | 20 V |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | — | 115 W |
| On-Resistance RDS(on) at VGS=10 V | — | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | — | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | — | Yes |
| Avalanche Tested | — | 100% |