IAUC100N10S5L040ATMA1 vs IAUC120N04S6N009ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC100N10S5L040ATMA1 disebabkan oleh Infineon dan IAUC120N04S6N009ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUC100N10S5L040ATMA1 IAUC120N04S6N009ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOST 5 Power-Transistor (IAUC) OptiMOS 6 40V
Jenis Transistor N-Channel Enhancement Mode MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at Tc 100 A —
Pulsed Drain Current (IDM) 400 A —
On-State Resistance RDS(on) max 4 mOhm —
Gate Threshold Voltage VGS(th) Logic Level —
Continuous Power Dissipation (Tc) 167 W —
Kemasan PG-TDSON-8-34 (SuperSO8 5x6 mm) PG-TDSON-8-33 (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C (junction) —
MSL Moisture Sensitivity MSL1 (up to 260 C peak reflow) —
Automotive Qualification AEC-Q101 qualified AEC-Q101
Avalanche Tested 100% production avalanche tested —
AOI Compatibility Feasible for automatic optical inspection —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (V_DSS) — 40 V
Continuous Drain Current (I_D, Tc) — 120 A
Arus Alir Gesa — [DATA_NEEDED: pulsed I_D value]
R_DS(on) max @ V_GS=10V — 0.9 mΩ
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: V_GS(th) typical value]
Total Gate Charge Q_g typ — [DATA_NEEDED: Q_g typical]
Power Dissipation (Tc) — 150 W
Thermal Resistance R_thJC max — 1.0 K/W
Suhu Hubungan Operasi — -55 °C to +175 °C
Aras MSL — 1
RoHS — Compliant
Lead-Free / Halogen-Free — Yes (per Infineon product page)

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