IAUC100N10S5L040ATMA1 - 100V 4mΩ 100A N-Channel MOSFET | Infineon
MPN: IAUC100N10S5L040ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $2.99 | $29.90 |
| 100 | $2.55 | $255.00 |
| 500 | $2.18 | $1,090.00 |
| 1,000 | $1.94 | $1,940.00 |
IAUC100N10S5L040ATMA1 Overview
An automotive-grade power MOSFET is a voltage-controlled switching transistor engineered for high-current, high-efficiency DC-DC conversion and motor drive in vehicles, where it sits within the broader semiconductor hierarchy as discrete MOSFET -> power transistor -> power semiconductor -> semiconductor device. The IAUC family is qualified to AEC-Q101 standards and is designed specifically for 12 V and 24 V automotive board nets, where switching losses, conduction losses, and ruggedness under repetitive avalanche events dominate the design budget.
Key features of the IAUC100N10S5L040ATMA1 include a logic-level gate drive threshold (Vgs(th) compatible with 4.5 V microcontrollers), 167 W continuous power dissipation at Tc, 100% avalanche-tested ruggedness per Infineon's automotive qualification flow, MSL1 moisture sensitivity up to 260 °C peak reflow, and suitability for automatic optical inspection (AOI). The OptiMOST 5 cell architecture reduces gate charge Qg and output capacitance Coss versus the previous generation, enabling lower switching losses at high di/dt.
Technically, the device uses a vertical N-channel DMOS structure with a trench gate, optimized for low RDS(on) at small package footprint. The PG-TDSON-8-34 footprint exposes the drain pad for direct thermal conduction into the PCB copper, allowing the part to deliver 100 A continuous with proper board thermal design. A single-pulse avalanche energy rating and 100% avalanche-tested production screen make it robust against unclamped inductive switching events common in solenoid, relay, and motor-drive applications.
Typical applications include automotive 12 V/24 V ECU power distribution, electric power steering (EPS), braking systems, DC-DC converters, and high-current motor drives in body and chassis electronics. The logic-level gate makes it directly compatible with microcontroller PWM outputs without a gate-driver charge pump.
When designing with this MOSFET, observe the SOA curves and ensure the drain tab is soldered to a copper area sized for the application's continuous dissipation. Place the gate driver close to the gate pin to minimize parasitic inductance that would otherwise slow switching edges and increase ringing.
Drop-in alternatives for IAUC100N10S5L040ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUC100N10S5L040ATMA1 (same form factor and footprint) — differing in Package, Automotive Qualification, Drain-Source Voltage (VDS), MSL Level, Operating Temperature Range.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUC100N10S5N040ATMA1
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IAUC100N10S5L280DATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUC60N04S6L030HATMA1
✅ Drop-In✓ In Stock
$0.94 / Unit
View Datasheet →IAUC120N04S6N009ATMA1
✅ Drop-In✓ In Stock
$1.6 / Unit
View Datasheet →IAUC120N06S5L015ATMA1
✅ Drop-In✓ In Stock
$0.92 / Unit
View Datasheet →IAUC100N10S5L040ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOST 5 Power-Transistor (IAUC) |
| Transistor Type | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 100 A |
| Pulsed Drain Current (IDM) | 400 A |
| On-State Resistance RDS(on) max | 4 mOhm |
| Gate Threshold Voltage VGS(th) | Logic Level |
| Continuous Power Dissipation (Tc) | 167 W |
| Package | PG-TDSON-8-34 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 C to +175 C (junction) |
| MSL Moisture Sensitivity | MSL1 (up to 260 C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Tested | 100% production avalanche tested |
| AOI Compatibility | Feasible for automatic optical inspection |
IAUC100N10S5L040ATMA1 Pin Configuration
| Pin 1 | Source — Source terminal 1 (low-side connection) |
| Pin 2 | Source — Source terminal 2 (low-side connection) |
| Pin 3 | Source — Source terminal 3 (low-side connection) |
| Pin 4 | Gate — Gate drive input (logic-level) |
| Pin 5 | Drain — Drain terminal (top-side, also exposed thermal pad) |
| Pin 6 | Drain — Drain terminal (top-side, also exposed thermal pad) |
| Pin 7 | Drain — Drain terminal (top-side, also exposed thermal pad) |
| Pin 8 | Drain — Drain terminal (top-side, also exposed thermal pad) |
Safe Operating Area (DC)
Typical Applications
IAUC100N10S5L040ATMA1 is suitable for 7 applications: Automotive 12V/24V ECU Power Distribution, Electric Power Steering (EPS) Motor Drive, Automotive Braking System (ABS/ESC) Solenoid Drivers, High-Current DC-DC Buck Converter (12V to 3.3V/5V), Industrial High-Side Load Switch (24V Bus), Battery Management System (BMS) Discharge Path, Server 48V Hot-Swap and ORing Switch.
Automotive 12V/24V ECU Power Distribution
The IAUC100N10S5L040ATMA1 is well suited for automotive ECU high-side and low-side power distribution switches operating directly from 12V or 24V board nets. Its 100V VDS rating provides comfortable margin against 24V load-dump transients up to 35V, while the 4 mΩ RDS(on) at 10V VGS keeps conduction loss below 200 mW at 50 A continuous load - critical for always-on body controllers that must minimize quiescent current drain on the battery. The logic-level gate threshold allows direct PWM drive from automotive microcontrollers without a charge pump. AEC-Q101 qualification and MSL1 reflow rating satisfy automotive reliability and assembly requirements, and the 100% avalanche-tested production screen ensures robustness against the back-EMF of relay coils and solenoids sharing the same harness.
Recommended
Electric Power Steering (EPS) Motor Drive
In EPS motor inverter stages the IAUC100N10S5L040ATMA1 serves as the low-side switching element in a three-phase bridge driving a 50-80A peak BLDC motor at 12V. The OptiMOST 5 cell geometry delivers low Qg and Qgd, which reduces switching loss at the 20 kHz PWM frequencies typical of EPS controllers - a 4 mΩ RDS(on) part running at 50 kHz with 80A peak contributes roughly 30% lower total power dissipation than the previous-generation OptiMOST 2 device. The AEC-Q101 qualification and 100% avalanche-tested ruggedness are essential for ASIL-D functional-safety analysis of the steering subsystem, and the SuperSO8 5x6 footprint with exposed drain pad permits tight PCB layout under the motor-control heat-sink interface.
Recommended
Automotive Braking System (ABS/ESC) Solenoid Drivers
ABS and electronic stability control modules switch hydraulic solenoid valves at 20-40A peak currents with rapid PWM duty cycles. The IAUC100N10S5L040ATMA1 with 4 mΩ RDS(on) and 400A pulsed drain current (IDM) handles the inrush of solenoid energization without entering thermal runaway, and the 100% avalanche-tested screening absorbs the flyback energy when the solenoid is de-energized. Its 100V VDS margin exceeds the worst-case 24V transient environment of a brake-by-wire system, and the SuperSO8 5x6 exposed-pad package conducts heat directly into the chassis-grounded copper pour used in brake modules for EMI shielding. Logic-level gate drive permits direct interface to the ASIL-rated ABS MCU without a discrete gate-driver stage.
Recommended
High-Current DC-DC Buck Converter (12V to 3.3V/5V)
The IAUC100N10S5L040ATMA1 functions as the synchronous low-side FET in a 12V-input automotive buck converter delivering 30-60A at 3.3V or 5V to infotainment, ADAS, or telematics loads. At 4 mΩ RDS(on), conduction loss at 50A continuous is roughly 10W, which the SuperSO8 5x6 package dissipates comfortably when soldered to 4-6 square inches of 2oz copper - sufficient for 95%+ efficiency at full load. The OptiMOST 5 process delivers low Qoss, reducing the dead-time body-diode conduction loss that otherwise penalizes synchronous buck efficiency. Logic-level gate drive allows direct connection to a controller such as the Infineon TLD5191ESXUMA1 automotive buck controller family.
Recommended
Industrial High-Side Load Switch (24V Bus)
In industrial 24V PLC and process-control systems, the IAUC100N10S5L040ATMA1 serves as the high-side switching element for solenoid valves, contactors, and motor loads up to 50A continuous. Its 100V VDS rating provides ample headroom above the 24V nominal bus (which can reach 36V during IEC 61131-2 transient testing), and the 4 mΩ RDS(on) keeps dissipation below 12W at full load - manageable with a modest copper heatsink. The 100% avalanche-tested ruggedness is critical when switching inductive loads such as 24V solenoids without external freewheeling diodes. Logic-level gate drive allows direct interface to industrial 5V microcontroller GPIO or to dedicated high-side switch drivers in the Infineon PROFET family.
Recommended
Battery Management System (BMS) Discharge Path
In 12V/24V automotive BMS discharge and pre-charge circuits, the IAUC100N10S5L040ATMA1 acts as the solid-state disconnect switch between the battery and the high-voltage DC bus during service. The 4 mΩ RDS(on) reduces continuous path loss to under 100 mW at 25A trickle discharge, while the 100V VDS comfortably exceeds the maximum pack voltage of 24V lead-acid or 48V mild-hybrid battery systems. The 100% avalanche-tested screening protects against the inductive kick of pre-charge resistors, and the AEC-Q101 qualification satisfies automotive safety standards for crash-relevant BMS applications. The exposed-drain SuperSO8 5x6 package allows the part to be mounted directly to a busbar copper pad for minimal thermal resistance.
Recommended
Server 48V Hot-Swap and ORing Switch
In 48V telecom and hyperscale data-center hot-swap and ORing applications, the IAUC100N10S5L040ATMA1 provides an efficient low-loss disconnect path between the 48V bus and downstream point-of-load converters. The 100V VDS rating exceeds the 48V nominal plus transient margin, and the 4 mΩ RDS(on) delivers conduction loss comparable to dedicated 80V ORing controllers. The exposed-drain SuperSO8 5x6 package enables direct soldering to high-current bus bars on the server backplane. While the part is AEC-Q101 qualified for automotive use, this same ruggedness and the 100% avalanche-tested screening make it attractive for server power applications where reliability is paramount.
Recommended
Recommended Products Summary
Engineering reference data for IAUC100N10S5L040ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUC100N10S5N040ATMA1 | IAUC100N10S5L280DATMA1 | IAUC60N04S6L030HATMA1 | IAUC120N04S6N009ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (SuperSO8 5x6) | PG-TDSON-8-34 (SuperSO8 5x6) - same | PG-TDSON-8-34 (SuperSO8 5x6) - same | PG-TDSON-8-34 (SuperSO8 5x6) - same | PG-TDSON-8-34 (SuperSO8 5x6) - same | PG-TDSON-8-34 (SuperSO8 5x6) - same |
| VDS (Drain-Source Voltage) | 100 V | 100 V | 100 V | 40 V | 40 V | 60 V |
| RDS(on) max | 4 mOhm | 4 mOhm | 2.8 mOhm (est. - not in verified data, using part number convention) | 3 mOhm | 0.9 mOhm | 1.5 mOhm |
| Continuous Drain Current (ID) | 100 A | 100 A | 100 A (family typical) | 60 A (per part number) | 120 A | 120 A |
| Gate Threshold Type | Logic-level | Standard (10V) | Logic-level | Logic-level | Standard (10V) | Logic-level |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Avalanche Tested | 100% production tested | 100% production tested | 100% production tested | 100% production tested | 100% production tested | 100% production tested |
Key Differentiators
- Logic-level gate threshold allows direct microcontroller drive without gate driver (vs IAUC100N10S5N040ATMA1)
- Best RDS(on) per dollar in 100V/100A SuperSO8 class (vs IAUC100N10S5L280DATMA1)
- Higher VDS rating than 40V/60V IAUC siblings for 24V board nets (vs IAUC120N04S6N009ATMA1)
Design Notes
Estimated: at continuous 50A load with RDS(on) = 4 mOhm and VGS = 10V, conduction dissipation is P = I^2 * R = 50^2 * 0.004 = 10W. Mount the PG-TDSON-8-34 exposed drain pad to a minimum copper area of 4 square inches of 2 oz copper, which keeps junction-to-ambient thermal resistance theta_JA below 40 C/W and junction temperature rise below 175C - 85C ambient = 90C. For continuous loads above 80A, increase copper area or add a forced-air heatsink.
Place the gate driver within 10 mm of the gate pin to minimize parasitic gate-loop inductance. Use a 10 Ohm gate-source resistor to damp high-frequency ringing, and a 100 Ohm gate-drive resistor to control di/dt. The exposed drain pad must have at least 8 thermal vias (0.3 mm drill, 1.0 mm pitch) under the pad to conduct heat into inner-layer copper planes. Source pins 1-3 should be tied to a single low-impedance ground pour to share current evenly.
Keep the high-di/dt power loop (drain to load to source) area under 50 mm^2 to minimize parasitic inductance and switching-loss overshoot. Per the Infineon OptiMOST 5 datasheet layout guidelines, separate the gate-drive return path from the power source return path to avoid ground-bounce coupling into the gate. Place a 100 nF X7R ceramic bypass capacitor directly between VCC of the gate driver and the source pins of the MOSFET, within 5 mm of the package.
Do not exceed VGS of +/-20V absolute maximum, even during transient ringing - add a 10V Zener clamp between gate and source if the driver can overshoot. Verify that the body diode can carry the full ID during dead-time, otherwise add an external anti-parallel Schottky for high-frequency synchronous rectification. Avoid paralleling multiple IAUC100N10S5L040ATMA1 parts without individual gate-source resistors - matched VGS(th) is required for current sharing.
Compliance Information
AEC-Q101 qualified per Infineon datasheet (automotive-grade MOSFET, not Q100 - Q100 is for ICs). RoHS and REACH compliant per Infineon product page. MSL1 rated up to 260 C peak reflow. 100% avalanche-tested production screen per Infineon automotive qualification flow.
