IAUC120N06S5N022ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N022ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N022ATMA1
IAUC120N06S5N022ATMA1 - 60V, 2.2mΞ© OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N022ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $0.94 |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) | 170 A (Tj) | β |
| On-Resistance RDS(on) max | 2.2 mΞ© at VGS=10 V | β |
| Power Dissipation (PD) | 136 W (Tc) | β |
| Operating Temperature Range | [DATA_NEEDED: TJ min/max] | β |
| Package | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 trench | β |
| Channel Type | N-Channel | β |
| Pin Count | 8 (with exposed pad) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| RoHS Status | Compliant | Compliant |
| Halogen-Free | Yes (per Infineon product family convention) | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) @4.5V] | β |
| Manufacturer | β | Infineon Technologies |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |