IAUC120N06S5N022ATMA1 vs IAUC60N04S6L030HATMA1 比較
詳細並排比較 IAUC120N06S5N022ATMA1 由 Infineon 與 IAUC60N04S6L030HATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 ✓ 啟用中規格比較
| 參數 | IAUC120N06S5N022ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) | 170 A (Tj) | — |
| On-Resistance RDS(on) max | 2.2 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 136 W (Tc) | — |
| 工作溫度範圍 | [DATA_NEEDED: TJ min/max] | — |
| 封裝 | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 trench | — |
| Channel Type | N-Channel | — |
| 腳位數 | 8 (with exposed pad) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| RoHS 狀態 | Compliant | Compliant |
| 無鹵素 | Yes (per Infineon product family convention) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) @4.5V] | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| 工作接面溫度 | — | -55 C to +175 C |
| MSL 等級 | — | 1 (per JEDEC J-STD-020) |