IAUC120N06S5N022ATMA1 vs IAUC60N04S6L030HATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC120N06S5N022ATMA1 sa pamamagitan ng Infineon at IAUC60N04S6L030HATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 ✓ NakahandaInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC120N06S5N022ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) | 170 A (Tj) | — |
| On-Resistance RDS(on) max | 2.2 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 136 W (Tc) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: TJ min/max] | — |
| Packhaging | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 trench | — |
| Channel Type | N-Channel | — |
| Bilang ng Pin | 8 (with exposed pad) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| Tindminan RoHS | Compliant | Compliant |
| Wala sa Halogen | Yes (per Infineon product family convention) | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) @4.5V] | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |