IAUC50N08S5L096ATMA1 vs IAUCN08S7N034ATMA1 Comparison

Detailed side-by-side comparison of IAUC50N08S5L096ATMA1 by Infineon and IAUCN08S7N034ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Active

Specification Comparison

Parameter IAUC50N08S5L096ATMA1 IAUCN08S7N034ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
Operating Temperature Range -55°C to +175°C —
Package PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (TDSON EP)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
RoHS Status Compliant Compliant
Lead-Free Yes —
MSL Level [DATA_NEEDED: MSL level] MSL 1 (unlimited floor life)
Series — OptiMOS™ 7
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 120 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V — 3.4 mΩ
Gate-Source Threshold (V<sub>GS(th)</sub>) — 3.2 V (typ)
Total Gate Charge (Q<sub>G</sub>) — 45.8 nC @ V<sub>GS</sub>=10 V
Input Capacitance (C<sub>iss</sub>) — 1.27 nF
Output Capacitance (C<sub>oss</sub>) — 3.115 nF
Reverse Transfer Capacitance (C<sub>rss</sub>) — 23 pF
Power Dissipation (P<sub>D</sub>) — 118 W
Operating Junction Temperature — -55°C to +175°C

Datasheets & Resources

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