IAUC50N08S5L096ATMA1 vs IAUCN08S7N034ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUC50N08S5L096ATMA1 disebabkan oleh Infineon dan IAUCN08S7N034ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUC50N08S5L096ATMA1 IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 - 80V 50A 9.6mΩ OptiMOS 5 | Infineon

IAUC50N08S5L096ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUC50N08S5L096ATMA1 IAUCN08S7N034ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Series OptiMOS 5 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 50 A (Tc) —
Pulsed Drain Current (IDM) 200 A —
On-Resistance (RDS(on)) 9.6 mΩ max @ VGS=10V, ID=25A —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Power Dissipation (PD) 60 W (Tc) —
Gambaran Suhu Operasi -55°C to +175°C —
Kemasan PG-TDSON-8-33 (5x6 mm) PG-TDSON-8-34 (TDSON EP)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualification AEC-Q101 AEC-Q101
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL level] MSL 1 (unlimited floor life)
Series — OptiMOS™ 7
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 120 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V — 3.4 mΩ
Gate-Source Threshold (V<sub>GS(th)</sub>) — 3.2 V (typ)
Total Gate Charge (Q<sub>G</sub>) — 45.8 nC @ V<sub>GS</sub>=10 V
Input Capacitance (C<sub>iss</sub>) — 1.27 nF
Output Capacitance (C<sub>oss</sub>) — 3.115 nF
Reverse Transfer Capacitance (C<sub>rss</sub>) — 23 pF
Power Dissipation (P<sub>D</sub>) — 118 W
Suhu Hubungan Operasi — -55°C to +175°C

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