IAUC50N08S5L096ATMA1 vs IAUCN08S7N034ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC50N08S5L096ATMA1 sa pamamagitan ng Infineon at IAUCN08S7N034ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
IAUCN08S7N034ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC50N08S5L096ATMA1 | IAUCN08S7N034ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 50 A (Tc) | — |
| Pulsed Drain Current (IDM) | 200 A | — |
| On-Resistance (RDS(on)) | 9.6 mΩ max @ VGS=10V, ID=25A | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Power Dissipation (PD) | 60 W (Tc) | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | — |
| Packhaging | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8-34 (TDSON EP) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | MSL 1 (unlimited floor life) |
| Series | — | OptiMOS™ 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 120 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 3.4 mΩ |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | — | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | — | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | — | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | — | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | — | 23 pF |
| Power Dissipation (P<sub>D</sub>) | — | 118 W |
| Temperature ng Junction na Operasyon | — | -55°C to +175°C |