IAUC60N04S6N044ATMA1 vs IAUC90N10S5N062ATMA1 Perbandingan

Perbandingan bersamaan detil IAUC60N04S6N044ATMA1 dari Infineon dan IAUC90N10S5N062ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUC60N04S6N044ATMA1 IAUC90N10S5N062ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS-6 N-channel trench MOSFET Trench MOSFET (OptiMOS 5, Generation 5)
Drain-Source Voltage (V_DS) 40 V —
Gate-Source Voltage (V_GS) [DATA_NEEDED: max V_GS rating] —
Continuous Drain Current (I_D) at Tc=25°C 60 A —
Continuous Drain Current (I_D) at Tc=100°C [DATA_NEEDED: pulsed/current derated value] —
Pulsed Drain Current (I_DM) [DATA_NEEDED: pulsed drain current] —
On-Resistance R_DS(on) max @ V_GS=10V 4.4 mΩ —
On-Resistance R_DS(on) max @ V_GS=4.5V [DATA_NEEDED: R_DS(on) at V_GS=4.5V] —
Total Gate Charge (Q_g) [DATA_NEEDED: typical gate charge] —
Power Dissipation (P_D) at Tc=25°C 42 W —
Suhu Hubung Kerja -55°C to +175°C -55 C to +175 C
Paket PG-TDSON-8 (5x6 mm) with exposed pad PG-TDSON-8-34 (TDSON-8)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (unlimited) —
Automotive Qualification AEC-Q101 qualified (IAUC prefix) AEC-Q101 qualified
Status RoHS Compliant —
Lead-Free / Halogen-Free Yes / [DATA_NEEDED: halogen-free status] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tc=25C — 90 A
Maximum On-Resistance RDS(on) max at VGS=10V — 6.2 mOhm
Gate-Source Threshold Voltage VGS(th) typ — 3.8 V
Maximum Power Dissipation (Tc=25C) — 115 W
Avalanche Rated — Yes (100% avalanche tested)
MSL (Moisture Sensitivity Level) — MSL1 (260 C peak reflow)
RoHS / Green Product — Yes (RoHS compliant, Green Product)
Lead-Free — Yes

Spek dan Sumber

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