IAUCN04S7L006ATMA1 vs IAUCN08S7N034ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L006ATMA1 dari Infineon dan IAUCN08S7N034ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L006ATMA1 IAUCN08S7N034ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) 175 A —
R_DS(on) Max 0.6 mΩ at V_GS = 10 V —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical value] —
Gate Charge (Q_g) [DATA_NEEDED: total gate charge] —
Rentang Suhu Kerja -55 °C to +175 °C —
Paket PG-TDSON-8-43 PG-TDSON-8-34 (TDSON EP)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS-7 trench —
Automotive Qualified Yes (AEC-Q101) —
Status RoHS Compliant Compliant
Jumlah Pin 8 —
Packaging Tape and Reel (ATMA1) —
Polarity Single N-Channel —
Manufacturer — Infineon Technologies
Series — OptiMOS™ 7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) — 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — 120 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V — 3.4 mΩ
Gate-Source Threshold (V<sub>GS(th)</sub>) — 3.2 V (typ)
Total Gate Charge (Q<sub>G</sub>) — 45.8 nC @ V<sub>GS</sub>=10 V
Input Capacitance (C<sub>iss</sub>) — 1.27 nF
Output Capacitance (C<sub>oss</sub>) — 3.115 nF
Reverse Transfer Capacitance (C<sub>rss</sub>) — 23 pF
Power Dissipation (P<sub>D</sub>) — 118 W
Suhu Hubung Kerja — -55°C to +175°C
Level MSL — MSL 1 (unlimited floor life)
Automotive Qualification — AEC-Q101

Spek dan Sumber

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