IAUCN04S7L019ATMA1 vs BSC032N04LSATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7L019ATMA1 by Infineon and BSC032N04LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUCN04S7L019ATMA1 BSC032N04LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value] —
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value] —
Package PG-TDSON-8-33 PG-TDSON-8-6 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55°C to +175°C (junction) —
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C] —
Thermal Resistance, Junction-to-Ambient [DATA_NEEDED: RthJA value] —
Automotive Qualification AEC-Q101 qualified —
RoHS Status Compliant Compliant
MSL Level 1 —
Packaging Tape & Reel (13-inch reel) —
Standard Pack Quantity 5000 pieces —
Ordering Code Suffix ATMA1 (Tape & Reel 13") —
Part Series — OptiMOS 5 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Ta=25°C — 21 A
Continuous Drain Current (ID) at Tc=25°C — 98 A
RDS(on) max at VGS=10V — 3.2 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 52 W
Gate-Source Voltage (VGS) — ±20 V
Technology — OptiMOS 5 trench
Operating Junction Temperature — -55°C to +175°C
Lead-Free — Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote