IAUCN04S7L019ATMA1 vs BSC032N04LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUCN04S7L019ATMA1 disebabkan oleh Infineon dan BSC032N04LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IAUCN04S7L019ATMA1 BSC032N04LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value] —
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value] —
Kemasan PG-TDSON-8-33 PG-TDSON-8-6 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55°C to +175°C (junction) —
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C] —
Tegangan Panas, Hubungan ke Lingkungan [DATA_NEEDED: RthJA value] —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Aras MSL 1 —
Packaging Tape & Reel (13-inch reel) —
Standard Pack Quantity 5000 pieces —
Ordering Code Suffix ATMA1 (Tape & Reel 13") —
Part Series — OptiMOS 5 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Ta=25°C — 21 A
Continuous Drain Current (ID) at Tc=25°C — 98 A
RDS(on) max at VGS=10V — 3.2 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 52 W
Gate-Source Voltage (VGS) — ±20 V
Technology — OptiMOS 5 trench
Suhu Hubungan Operasi — -55°C to +175°C
Lead-Free — Yes

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