IAUCN04S7L019ATMA1 vs BSC032N04LSATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L019ATMA1 dari Infineon dan BSC032N04LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L019ATMA1 BSC032N04LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value] —
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value] —
Paket PG-TDSON-8-33 PG-TDSON-8-6 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55°C to +175°C (junction) —
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C] —
Tahanan Panas, Hubung-lingkungan [DATA_NEEDED: RthJA value] —
Automotive Qualification AEC-Q101 qualified —
Status RoHS Compliant Compliant
Level MSL 1 —
Packaging Tape & Reel (13-inch reel) —
Standard Pack Quantity 5000 pieces —
Ordering Code Suffix ATMA1 (Tape & Reel 13") —
Part Series — OptiMOS 5 40V
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Ta=25°C — 21 A
Continuous Drain Current (ID) at Tc=25°C — 98 A
RDS(on) max at VGS=10V — 3.2 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 52 W
Gate-Source Voltage (VGS) — ±20 V
Technology — OptiMOS 5 trench
Suhu Hubung Kerja — -55°C to +175°C
Lead-Free — Yes

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