IAUCN04S7L028ATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L028ATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L028ATMA1
IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L028ATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L028ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.88 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | OptiMOS 7 |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) | 100 A | β |
| On-State Resistance (RDS(on)) max | 2.80 mOhm at VGS=10 V | β |
| On-State Resistance (RDS(on)) | 2.82 mOhm at VGS=10 V (JLCPCB reported) | β |
| Gate-Source Threshold (VGS(th)) | 1.8 V (typ) | β |
| Gate Charge (Qg) | 24 nC at VGS=10 V | β |
| Input Capacitance (Ciss) | 1.578 nF | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | 788 pF | β |
| Reverse Transfer Capacitance (Crss) | 36 pF | β |
| Power Dissipation (Ptot) | 58 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | PG-TDSON-8-33 (TDSON-8 EP) | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Status | Compliant | Compliant |
| Technology | β | Trench MOSFET, N-Channel |
| Continuous Drain Current (ID) at Tj | β | 91 A |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Operating Temperature Range | β | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |