IAUCN04S7N024HATMA1 vs IAUC60N04S6L030HATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N024HATMA1 dari Infineon dan IAUC60N04S6L030HATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon
IAUCN04S7N024HATMA1 ✓ AktifInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N024HATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 40 V | — |
| Configuration | Dual N-Channel (independent) | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 100 A | — |
| On-Resistance R_DS(on) typ | 2.46 mΩ at V_GS = 10 V | — |
| On-Resistance R_DS(on) max | [DATA_NEEDED: max R_DS(on) at 10 V V_GS] | — |
| Maximum Power Dissipation (Tc) | 75 W | — |
| Paket | PG-TDSON-8-56 (SSO8 HB 5x6 mm) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | [DATA_NEEDED: operating temperature range] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| Technology | OptiMOS-7 trench-gate | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: typical V_GS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Packing | Tape & Reel | — |
| Part Series | — | OptiMOS 6 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Suhu Hubung Kerja | — | -55 C to +175 C |