IAUCN08S7L018ATMA1 vs ISC151N08NM6ATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L018ATMA1 by Infineon and ISC151N08NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IAUCN08S7L018ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at Tj | 210 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| Operating Temperature Range | -55 °C to +175 °C | — |
| Package | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8 FL |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive (per Infineon part description) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| RoHS Status | Compliant | Compliant |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Continuous Drain Current (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Number of Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Operating Temperature | — | -55 °C to +175 °C |