IAUCN08S7L018ATMA1 vs ISC151N08NM6ATMA1 比較
詳細並排比較 IAUCN08S7L018ATMA1 由 Infineon 與 ISC151N08NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN08S7L018ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID) at Tj | 210 A | — |
| Continuous Drain Current (ID) at Tc | [DATA_NEEDED: ID at Tc] | — |
| Maximum RDS(on) at VGS=10 V | 1.8 mΩ | — |
| Power Dissipation (PD) at Tc=25 °C | 169 W | — |
| 工作溫度範圍 | -55 °C to +175 °C | — |
| 封裝 | PG-TDSON-8-43 (5x6 mm) | PG-TDSON-8 FL |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | Automotive (per Infineon part description) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| RoHS 狀態 | Compliant | Compliant |
| 電晶體類型 | — | N-Channel MOSFET |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| 連續汲極電流 (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| 腳位數 | — | 8 |
| Channel Mode | — | Enhancement |
| 工作溫度 | — | -55 °C to +175 °C |