IAUCN08S7L110ATMA1 vs IAUCN10S5L280DATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L110ATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN08S7L110ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W | — |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS_max] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS_th] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Q_G_total] | — |
| Operating Junction Temperature | -55 °C to +175 °C | — |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-61 (SSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS™ (Trench) | OptiMOS 5 Trench MOSFET |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (AEC-Q101 expected per family) | Yes (AEC-Q101, IAU prefix) |
| Polarity | Single N-Channel | — |
| Configuration | Single | Dual N-Channel MOSFET Array |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| Operating Temperature Range | — | -55C to +175C (junction) |
| Pin Count | — | 8 |
| Packing | — | Tape & Reel (T&R) |