IAUCN08S7L110ATMA1 vs IAUCN10S5L280DATMA1 Comparison

Detailed side-by-side comparison of IAUCN08S7L110ATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L110ATMA1

IAUCN08S7L110ATMA1 - 80V 11mΞ© N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 βœ“ Active
Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN08S7L110ATMA1 IAUCN10S5L280DATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $1.62
FET Type N-Channel β€”
Drain-Source Voltage (V<sub>DS</sub>) 80 V β€”
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) 50 A β€”
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) 58 W β€”
R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) 11 mΞ© β€”
Gate-Source Voltage (V<sub>GS</sub>) max [DATA_NEEDED: V_GS_max] β€”
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: V_GS_th] β€”
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Q_G_total] β€”
Operating Junction Temperature -55 Β°C to +175 Β°C β€”
Package PG-TDSON-8-34 (TDSON-8) PG-TDSON-8-61 (SSO8)
Mounting Type Surface Mount Surface Mount
Technology OptiMOSβ„’ (Trench) OptiMOS 5 Trench MOSFET
MSL Level [DATA_NEEDED: MSL level] 1
RoHS Status Compliant Compliant
Automotive Qualified Yes (AEC-Q101 expected per family) Yes (AEC-Q101, IAU prefix)
Polarity Single N-Channel β€”
Configuration Single Dual N-Channel MOSFET Array
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 5
Drain-Source Voltage (Vds) β€” 100 V
Continuous Drain Current (Id) at Tj β€” 23 A
Power Dissipation (Pd) at Tc β€” 38 W
Operating Temperature Range β€” -55C to +175C (junction)
Pin Count β€” 8
Packing β€” Tape & Reel (T&R)

Datasheets & Resources

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