IAUCN08S7L110ATMA1 vs IAUCN10S5L280DATMA1 对比
详细并排对比 IAUCN08S7L110ATMA1 出自 Infineon 和 IAUCN10S5L280DATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IAUCN08S7L110ATMA1 | IAUCN10S5L280DATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.46 | $1.62 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W | — |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS_max] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS_th] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Q_G_total] | — |
| 工作结温 | -55 °C to +175 °C | — |
| 封装 | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-61 (SSO8) |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | OptiMOS™ (Trench) | OptiMOS 5 Trench MOSFET |
| MSL 等级 | [DATA_NEEDED: MSL level] | 1 |
| RoHS 状态 | Compliant | Compliant |
| Automotive Qualified | Yes (AEC-Q101 expected per family) | Yes (AEC-Q101, IAU prefix) |
| Polarity | Single N-Channel | — |
| Configuration | Single | Dual N-Channel MOSFET Array |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tj | — | 23 A |
| Power Dissipation (Pd) at Tc | — | 38 W |
| 工作温度范围 | — | -55C to +175C (junction) |
| 引脚数量 | — | 8 |
| Packing | — | Tape & Reel (T&R) |