IAUCN08S7N024ATMA1 vs IAUCN10S7L290TATMA1 比較

詳細並排比較 IAUCN08S7N024ATMA1 由 Infineon 與 IAUCN10S7L290TATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN08S7N024ATMA1 IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN08S7N024ATMA1 ✓ 啟用中
Infineon
IAUCN10S7L290TATMA1 IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 ✓ 啟用中

規格比較

參數 IAUCN08S7N024ATMA1 IAUCN10S7L290TATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series Automotive OptiMOS 7 (80 V) —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 100 V
Continuous Drain Current (ID) at TC=25C 165 A —
Drain-Source On-Resistance (RDS(on)) max 2.4 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Technology OptiMOS 7 trench —
封裝 PG-TDSON-8-34 (8-pin, exposed pad) PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +175C (typical automotive) —
功率耗散 (Ptot) [DATA_NEEDED: Ptot @ TC=25C] —
Automotive Qualification AEC-Q101 AEC-Q100 qualified
RoHS Compliance Compliant Compliant
MSL 等級 [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Typical Application 48 V automotive DC-DC, motor drive, load switch —
Product Family — OptiMOS™ 7
電晶體類型 — N-Channel MOSFET
Gate-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25°C — 27 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulse rating]
On-Resistance RDS(on) max @ VGS=10V — 28.6 mΩ
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5 V]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD) at TC=25°C — 45 W
工作接面溫度 — -55 °C to +175 °C
Lead-Free — Yes
Avalanche Rated — Yes
ESD Protection — HBM Class 1C (per Infineon datasheet)

資料表與資源

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