IAUCN08S7N024ATMA1 vs IAUCN10S7L290TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7N024ATMA1 sa pamamagitan ng Infineon at IAUCN10S7L290TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN08S7N024ATMA1 ✓ NakahandaInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN08S7N024ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 165 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 7 trench | — |
| Packhaging | PG-TDSON-8-34 (8-pin, exposed pad) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (typical automotive) | — |
| Pwersang Pinahihigpit (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q100 qualified |
| RoHS Compliance | Compliant | Compliant |
| Level ng MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | — |
| Product Family | — | OptiMOS™ 7 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |