IAUCN08S7N034ATMA1 vs IAUCN04S7L006ATMA1 Comparison

Detailed side-by-side comparison of IAUCN08S7N034ATMA1 by Infineon and IAUCN04S7L006ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Active

Specification Comparison

Parameter IAUCN08S7N034ATMA1 IAUCN04S7L006ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Series OptiMOS™ 7 —
Transistor Type N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 120 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V 3.4 mΩ —
Gate-Source Threshold (V<sub>GS(th)</sub>) 3.2 V (typ) —
Total Gate Charge (Q<sub>G</sub>) 45.8 nC @ V<sub>GS</sub>=10 V —
Input Capacitance (C<sub>iss</sub>) 1.27 nF —
Output Capacitance (C<sub>oss</sub>) 3.115 nF —
Reverse Transfer Capacitance (C<sub>rss</sub>) 23 pF —
Power Dissipation (P<sub>D</sub>) 118 W —
Operating Junction Temperature -55°C to +175°C —
Package PG-TDSON-8-34 (TDSON EP) PG-TDSON-8-43
Mounting Type Surface Mount Surface Mount
MSL Level MSL 1 (unlimited floor life) —
Automotive Qualification AEC-Q101 —
RoHS Status Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 175 A
R_DS(on) Max — 0.6 mΩ at V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical value]
Gate Charge (Q_g) — [DATA_NEEDED: total gate charge]
Operating Temperature Range — -55 °C to +175 °C
Technology — OptiMOS-7 trench
Automotive Qualified — Yes (AEC-Q101)
Pin Count — 8
Packaging — Tape and Reel (ATMA1)
Polarity — Single N-Channel

Datasheets & Resources

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