IAUCN08S7N034ATMA1 vs IAUCN04S7L006ATMA1 比較
詳細並排比較 IAUCN08S7N034ATMA1 由 Infineon 與 IAUCN04S7L006ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN08S7N034ATMA1 | IAUCN04S7L006ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 7 | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 120 A | — |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΩ | — |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) | — |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V | — |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF | — |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF | — |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF | — |
| Power Dissipation (P<sub>D</sub>) | 118 W | — |
| 工作接面溫度 | -55°C to +175°C | — |
| 封裝 | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-43 |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | MSL 1 (unlimited floor life) | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 狀態 | Compliant | Compliant |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 175 A |
| R_DS(on) Max | — | 0.6 mΩ at V_GS = 10 V |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical value] |
| Gate Charge (Q_g) | — | [DATA_NEEDED: total gate charge] |
| 工作溫度範圍 | — | -55 °C to +175 °C |
| Technology | — | OptiMOS-7 trench |
| Automotive Qualified | — | Yes (AEC-Q101) |
| 腳位數 | — | 8 |
| Packaging | — | Tape and Reel (ATMA1) |
| Polarity | — | Single N-Channel |