IAUCN08S7N034ATMA1 vs IAUCN04S7L006ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7N034ATMA1 dari Infineon dan IAUCN04S7L006ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7L006ATMA1 IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 - 40V 0.6mΩ 175A N-Ch MOSFET | Infineon

IAUCN04S7L006ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7N034ATMA1 IAUCN04S7L006ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS™ 7 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 120 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V 3.4 mΩ —
Gate-Source Threshold (V<sub>GS(th)</sub>) 3.2 V (typ) —
Total Gate Charge (Q<sub>G</sub>) 45.8 nC @ V<sub>GS</sub>=10 V —
Input Capacitance (C<sub>iss</sub>) 1.27 nF —
Output Capacitance (C<sub>oss</sub>) 3.115 nF —
Reverse Transfer Capacitance (C<sub>rss</sub>) 23 pF —
Power Dissipation (P<sub>D</sub>) 118 W —
Suhu Hubung Kerja -55°C to +175°C —
Paket PG-TDSON-8-34 (TDSON EP) PG-TDSON-8-43
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL 1 (unlimited floor life) —
Automotive Qualification AEC-Q101 —
Status RoHS Compliant Compliant
FET Type — N-Channel
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 175 A
R_DS(on) Max — 0.6 mΩ at V_GS = 10 V
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical value]
Gate Charge (Q_g) — [DATA_NEEDED: total gate charge]
Rentang Suhu Kerja — -55 °C to +175 °C
Technology — OptiMOS-7 trench
Automotive Qualified — Yes (AEC-Q101)
Jumlah Pin — 8
Packaging — Tape and Reel (ATMA1)
Polarity — Single N-Channel

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon