IAUCN10S5L280DATMA1 vs IAUC60N04S6L030HATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S5L280DATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active
Infineon
IAUC60N04S6L030HATMA1

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN10S5L280DATMA1 IAUC60N04S6L030HATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 β€”
Configuration Dual N-Channel MOSFET Array Half-Bridge (2 N-Channel)
Drain-Source Voltage (Vds) 100 V β€”
Continuous Drain Current (Id) at Tj 23 A β€”
Power Dissipation (Pd) at Tc 38 W β€”
Package PG-TDSON-8-61 (SSO8) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) β€”
Technology OptiMOS 5 Trench MOSFET β€”
Operating Temperature Range -55C to +175C (junction) β€”
Pin Count 8 β€”
MSL Level 1 1 (per JEDEC J-STD-020)
RoHS Status Compliant Compliant
Packing Tape & Reel (T&R) β€”
Part Series β€” OptiMOS 6
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID) at TJ β€” 60 A
On-Resistance R_DS(on) at VGS=10V β€” 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V β€” 35 nC
Output Capacitance (Coss) β€” 2.128 nF
Reverse Transfer Capacitance (Crss) β€” 596 pF
Gate Threshold Voltage (VGS(th)) β€” 2 V
Maximum Power Dissipation (PD) at TC β€” 75 W
Operating Junction Temperature β€” -55 C to +175 C
Automotive Qualification β€” AEC-Q101 (per part number suffix)

Datasheets & Resources

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