IAUCN10S5L280DATMA1 vs IAUC60N04S6L030HATMA1 对比

详细并排对比 IAUCN10S5L280DATMA1 出自 Infineon 和 IAUC60N04S6L030HATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUCN10S5L280DATMA1 IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 ✓ 量产中
Infineon
IAUC60N04S6L030HATMA1 IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 ✓ 量产中

规格对比

参数 IAUCN10S5L280DATMA1 IAUC60N04S6L030HATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.62 $0.94
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 5 —
Configuration Dual N-Channel MOSFET Array Half-Bridge (2 N-Channel)
Drain-Source Voltage (Vds) 100 V —
Continuous Drain Current (Id) at Tj 23 A —
Power Dissipation (Pd) at Tc 38 W —
封装 PG-TDSON-8-61 (SSO8) PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm)
安装类型 Surface Mount Surface Mount
Automotive Qualified Yes (AEC-Q101, IAU prefix) —
Technology OptiMOS 5 Trench MOSFET —
工作温度范围 -55C to +175C (junction) —
引脚数量 8 —
MSL 等级 1 1 (per JEDEC J-STD-020)
RoHS 状态 Compliant Compliant
Packing Tape & Reel (T&R) —
Part Series — OptiMOS 6
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TJ — 60 A
On-Resistance R_DS(on) at VGS=10V — 3.0 mOhm (typical)
Total Gate Charge (Qg) at VGS=10V — 35 nC
Output Capacitance (Coss) — 2.128 nF
Reverse Transfer Capacitance (Crss) — 596 pF
Gate Threshold Voltage (VGS(th)) — 2 V
Maximum Power Dissipation (PD) at TC — 75 W
工作结温 — -55 C to +175 C
Automotive Qualification — AEC-Q101 (per part number suffix)

数据手册与资源

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