IAUCN10S7L290TATMA1 vs IAUZ30N10S5L240ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN10S7L290TATMA1 sa pamamagitan ng Infineon at IAUZ30N10S5L240ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN10S7L290TATMA1 IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon

IAUCN10S7L290TATMA1 ✓ Nakahanda
Infineon
IAUZ30N10S5L240ATMA1 IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ30N10S5L240ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN10S7L290TATMA1 IAUZ30N10S5L240ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family OptiMOS™ 7 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Continuous Drain Current (ID) at TC=25°C 27 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM pulse rating] —
On-Resistance RDS(on) max @ VGS=10V 28.6 mΩ —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5 V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Power Dissipation (PD) at TC=25°C 45 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q100 qualified AEC-Q101 qualified
Level ng MSL 1 (per JEDEC J-STD-020) —
RoHS Compliance Compliant —
Lead-Free Yes —
Avalanche Rated Yes —
ESD Protection HBM Class 1C (per Infineon datasheet) —
FET Type — N-Channel
Technology — OptiMOS 5 (trench)
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D, Tc) — 30 A
R_DS(on) max at V_GS=10V — 24 mΩ
Gate-Source Voltage (V_GS) max — ±20 V
Gate Charge (Q_g) typ — 14 nC at V_GS=10V
Input Capacitance (C_iss) typ — 832 pF at V_DS=50V
Power Dissipation (P_D, Tc) — 45.5 W
Hanay ng Temperature na Operasyon — -55°C to +175°C (junction, automotive grade)
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
Tindminan RoHS — Compliant
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen-free status]

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