IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
MPN: IAUCN10S7N074ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.37 | $1.37 |
| 10 | $1.18 | $11.80 |
| 100 | $0.97 | $97.00 |
| 500 | $0.86 | $430.00 |
| 1,000 | $0.74 | $740.00 |
| 5,000 | $0.62 | $3,100.00 |
IAUCN10S7N074ATMA1 Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route and regulate current in power conversion. The N-channel variant requires a positive gate drive relative to source to turn on. Within the broader taxonomy, MOSFETs belong to discrete semiconductors > transistors > FETs > power MOSFETs. OptiMOS™ 7 is Infineon's latest-generation 100 V platform that combines a shielded-gate trench (SGT) cell structure with an optimized epitaxial layer to simultaneously reduce R<sub>DS(on)</sub>, gate charge (Qg), and output capacitance (Coss), enabling higher switching frequency and lower conduction losses.
Key features of the IAUCN10S7N074ATMA1 include a maximum drain-source voltage V<sub>DS</sub> of 100 V, continuous drain current I<sub>D</sub> of 78 A at T<sub>C</sub>, pulsed drain current support up to , gate-source voltage V<sub>GS</sub> rating of ±20 V, and typical R<sub>DS(on)</sub> of 7.4 mΩ at V<sub>GS</sub>=10 V. The SGT cell technology yields a figure-of-merit (FOM = R<sub>DS(on)</sub> × Qg) that is materially better than the previous OptiMOS™ 5 generation, supporting higher switching frequencies and reduced driver losses in 48 V automotive applications.
The PG-TDSON-8-34 package provides an exposed thermal pad that ties directly to the drain tab, giving low thermal resistance θ<sub>JA</sub> and supporting a maximum power dissipation P<sub>D</sub> of 96 W at T<sub>C</sub>=25 °C. The package is lead-free, RoHS compliant, and rated for MSL2 (1-year floor life). This combination of low R<sub>DS(on)</sub>, low Qg, and a thermally enhanced package makes the part well suited to automotive DC-DC converters, BLDC motor drives, battery protection, and high-current switching in 48 V systems.
Typical applications include 48 V mild-hybrid DC-DC converters, eMotor inverter stages, high-side load switches, battery management system (BMS) disconnect switches, and Class-D audio amplifier outputs. Designers frequently pair it with Infineon EiceDRIVER™ gate drivers such as 1EDN7116G or 2EDN7534R for fast, controlled turn-on/off in switching power topologies.
A critical design consideration is gate-drive voltage. While the part is specified at V<sub>GS</sub>=10 V for the headline R<sub>DS(on)</sub>, it can be driven from a 12 V regulated rail. Designers must observe the ±20 V V<sub>GS</sub> absolute maximum and ensure the gate-source path never exceeds this rating during transient events. PCB layout should use a wide copper pour on the drain pad and minimize source-inductance loop area to control switching losses and ringing.
This page synthesizes distributor pricing, parametrically similar drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IAUCN10S7N074ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN10S7N074ATMA1 (same form factor and footprint) — differing in Package, Technology, Mounting Type, Automotive Qualification, Drain-Source Voltage (VDS).
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✅ Drop-In📋 Reference alternative (not in catalog)
IAUCN10S7N074ATMA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | OptiMOS™ 7 (Shielded-Gate Trench) |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>) | 78 A (Tj) |
| Power Dissipation (P<sub>D</sub>) | 96 W (Tc) |
| R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) | 7.4 mΩ |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V |
| Operating Temperature Range | -55 °C to +175 °C |
| Package | PG-TDSON-8-34 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount |
| Pin Count | 8 (with exposed pad) |
| MSL Level | MSL2 (1 year) |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Application | 48 V Automotive Systems |
IAUCN10S7N074ATMA1 Pin Configuration
| Pin 1 | Source — Source connection (multiple pins tied together for low R<sub>DS(on)</sub>) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Source — Source connection |
| Pin 6 | Source — Source connection |
| Pin 7 | Source — Source connection |
| Pin 8 | Source — Source connection |
| Pin PAD | Drain — Drain terminal (also serves as thermal pad) |
Safe Operating Area (DC, T<sub>C</sub>=25 °C)
Typical Applications
IAUCN10S7N074ATMA1 is suitable for 6 applications: 48 V Mild-Hybrid DC-DC Converter, eMotor Inverter (Mild-Hybrid), High-Side Battery Management Load Switch, Class-D Audio Amplifier Output Stage, Industrial 48 V–60 V DC-DC Synchronous Rectifier, Automotive LED Headlight Driver Switch.
48 V Mild-Hybrid DC-DC Converter
The IAUCN10S7N074ATMA1 is purpose-built for 48 V automotive DC-DC converters that step down from the 48 V mild-hybrid bus to 12 V subsystems or step up from 12 V to 48 V. With 100 V V<sub>DS</sub> headroom above the 48 V bus and 7.4 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, the part achieves synchronous-rectifier conduction losses of roughly I²R = 50² × 0.0074 = 18.5 W at 50 A, keeping efficiency above 96% at full load. The OptiMOS™ 7 shielded-gate trench (SGT) cell structure reduces gate charge Qg and output capacitance Coss, enabling 100–250 kHz switching frequencies with manageable driver loss. AEC-Q101 qualification allows direct deployment in production 48 V powertrains. Place as the low-side synchronous rectifier with a 1EDN7116G or 2EDN7534R gate driver for fast, controlled turn-on/off. Source: Infineon product page.
Recommended
eMotor Inverter (Mild-Hybrid)
The IAUCN10S7N074ATMA1 suits eMotor inverter stages in 48 V mild-hybrid electric vehicles where 100 V V<sub>DS</sub> headroom and 78 A continuous drain current are required. As a low-side switch in a three-phase inverter bridge, the part's 7.4 mΩ R<sub>DS(on)</sub> minimizes conduction loss during PWM switching cycles, and its PG-TDSON-8-34 package with exposed pad provides low θ<sub>JC</sub> for direct PCB heatsinking. The OptiMOS™ 7 SGT cell structure provides fast switching at 20 kHz PWM, reducing switching loss and audible noise. AEC-Q101 qualification ensures reliability under automotive thermal cycling. Pair with an IRSM808-105MH or TLE9180D32QKXUMA1 gate driver + controller for a complete three-phase inverter stage.
Recommended
High-Side Battery Management Load Switch
The IAUCN10S7N074ATMA1 operates as a high-side load switch or battery disconnect in 48 V BMS (Battery Management System) modules where low R<sub>DS(on)</sub> directly translates to lower voltage drop and heat dissipation across the disconnect path. At 78 A continuous and 100 V V<sub>DS</sub>, the part safely interrupts 48 V battery strings with controlled avalanche capability. The 7.4 mΩ on-state resistance results in 5.6 W dissipation at 80 A — well within the 96 W P<sub>D</sub> rating when properly heatsinked. AEC-Q101 qualification satisfies automotive reliability requirements for battery-pack deployment. Tie the gate through a pull-down resistor to ensure fail-safe off-state, and drive V<sub>GS</sub> from an isolated gate-drive transformer or bootstrap supply.
Recommended
Class-D Audio Amplifier Output Stage
The IAUCN10S7N074ATMA1 fits as the output half-bridge switch in 48 V automotive Class-D audio amplifiers where 100 V V<sub>DS</sub> and low R<sub>DS(on)</sub> directly improve amplifier efficiency and thermal headroom. At a 48 V bus, the part's 7.4 mΩ on-state resistance produces only ~2 W dissipation per channel at 20 A peak audio current — a substantial improvement over legacy 60 V MOSFETs with 15–20 mΩ. The OptiMOS™ 7 generation's lower gate charge reduces switching loss at 250–500 kHz PWM carrier frequencies, which is critical for automotive amplifier efficiency. AEC-Q101 qualification supports direct deployment in vehicle head-unit and premium audio amplifier modules. Place as the high-side and low-side switch in a half-bridge, with dead-time control managed by the audio processor.
Recommended
Industrial 48 V–60 V DC-DC Synchronous Rectifier
The IAUCN10S7N074ATMA1 serves as a synchronous rectifier on the secondary side of industrial 48 V to 60 V buck or buck-derived isolated DC-DC converters used in telecom, robotics, and automation. With 100 V V<sub>DS</sub> headroom and 7.4 mΩ R<sub>DS(on)</sub>, the part provides efficient rectification at high duty cycles while tolerating ringing transients on the secondary winding. The 78 A continuous drain current supports multi-kilowatt converters. OptiMOS™ 7's low Coss reduces dead-time loss during PWM transitions. While not AEC-Q101 required for industrial deployment, the part benefits from Infineon's automotive-grade reliability. Use with a TL594-class PWM controller and an isolated gate-driver such as 2EDL8033G4CXTMA1.
Recommended
Automotive LED Headlight Driver Switch
The IAUCN10S7N074ATMA1 functions as the PWM switch in automotive LED headlight driver stages where it controls current through high-brightness LED strings fed from a 48 V bus. With 100 V V<sub>DS</sub> rating and 7.4 mΩ R<sub>DS(on)</sub>, the MOSFET handles PWM dimming at 200–1000 Hz while dissipating minimal heat from conduction loss. The exposed-pad TDSON-8-34 package allows direct PCB heatsinking for headlamp electronics operating underhood at elevated ambient temperature. AEC-Q101 qualification supports deployment in production LED headlamp modules. Use with a TLD23313EPXUMA1 LED driver IC for closed-loop current regulation and dimming control.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN10S7N074ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN08S7L033ATMA1 | IAUC120N06S5L015ATMA1 | IAUCN04S7N037GATMA1 | IAUCN04S7N027GATMA1 | VBGQA1107MC100 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-34 (TDSON EP) - same | PG-TDSON-8-34 (TDSON EP) - same | PG-TDSON-8-34 (TDSON EP) - same | PG-TDSON-8-34 (TDSON EP) - same | DFN8 (5x6) - footprint compatible |
| V<sub>DS</sub> (V) | 100 V | 80 V | 120 V | 40 V | 40 V | 100 V |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V (typ) | 7.4 mΩ | 3.3 mΩ | 1.5 mΩ | 3.7 mΩ | 2.7 mΩ | 7.4 mΩ |
| Technology | OptiMOS™ 7 (SGT) | OptiMOS™ 7 (SGT) | OptiMOS™ 5 (SGT) | OptiMOS™ 7 (SGT) | OptiMOS™ 7 (SGT) | SGT |
| AEC-Q101 | Yes | Yes | Yes | Yes | Yes | Targeted |
Key Differentiators
- Higher V<sub>DS</sub> headroom than 80 V OptiMOS™ 7 family (vs IAUCN08S7L033ATMA1)
- OptiMOS™ 7 generation (lower Qg and FOM than OptiMOS™ 5) (vs IAUC120N06S5L015ATMA1)
- Direct drop-in 7.4 mΩ alternative from VBsemi (vs VBGQA1107MC100)
Design Notes
Estimated: at 78 A continuous drain and 7.4 mΩ R<sub>DS(on)</sub>, conduction loss is approximately I²R = 78² × 0.0074 = 45 W. The PG-TDSON-8-34 package's exposed drain pad must be soldered to a copper pour of at least 1 square inch on the top layer to maintain junction temperature within the 175 °C limit. Use thermal vias under the exposed pad to spread heat to inner copper planes. In forced-air environments, derate continuous current to 60–70 A at 85 °C ambient.
Minimize the source-inductance loop area by placing the gate-driver IC directly adjacent to the gate pin (pin 4) with a short, wide gate trace (≥20 mil). Add a 10 Ω–22 Ω gate resistor close to the driver to damp ringing, and a small Schottky diode (e.g., BAT54S) gate-to-source for fast turn-off. The exposed drain pad should use an array of thermal vias (0.3 mm pitch, 12+ vias) for heat transfer to inner planes. Avoid routing sensitive analog signals across the drain tab, which is a switching node.
The absolute maximum V<sub>GS</sub> is ±20 V; driving the gate from a 12 V supply is safe, but transient spikes above 20 V during fast turn-off can puncture the gate oxide. Add a 15 V Zener diode (e.g., BZX84C15L) gate-to-source for transient clamping. Also: never operate the part without a gate-source resistor (≥10 kΩ) in case the driver is tri-stated — otherwise the gate can float and partially turn on, causing shoot-through in half-bridge configurations.
Compliance Information
AEC-Q101 qualified for automotive. RoHS compliant per DigiKey and Mouser listings. Halogen-free per Infineon product family standard.
