IAUS260N10S5N019TATMA1 vs IGLR70R200D2SXUMA1 Comparison
Detailed side-by-side comparison of IAUS260N10S5N019TATMA1 by Infineon and IGLR70R200D2SXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΩ OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 ✓ Active
Specification Comparison
| Parameter | IAUS260N10S5N019TATMA1 | IGLR70R200D2SXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-to-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) | 260 A (Tj) | — |
| On-State Resistance (Rds(on)) | 1.9 mΩ (typical, 10 V Vgs) | — |
| Power Dissipation (Pd) | 300 W (Tc) | — |
| Package | PG-HDSOP-16-2 (TOLT, topside-cooled) | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) |
| Mounting Type | Surface Mount | — |
| Pin Count | 16 | — |
| Operating Temperature Range | -55 C to +175 C (Tj) | -40 °C to +150 °C |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Technology | OptiMOS 5 trench-gate | GaN HEMT (E-mode, enhancement-mode) |
| Automotive Qualified | Yes (IAUS prefix denotes automotive grade) | — |
| RoHS Status | Compliant | — |
| Product Family | — | CoolGaN G5 |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 700 V |
| Continuous Drain Current (ID, Tc) | — | 9.3 A |
| Power Dissipation (PD, Tc) | — | 34 W |
| On-Resistance (RDS(on), max) | — | 200 mΩ |
| Total Gate Charge (Qg) | — | 1.26 nC |
| Output Capacitance (Coss) | — | 91 pF |
| Reverse Transfer Capacitance (Crss) | — | 0.21 pF |
| Gate Threshold Voltage (VGS(th), typ) | — | 1.2 V |
| RoHS | — | Compliant |