IAUT300N08S5N012ATMA2 vs IAUS300N08S5N012 Comparison

Detailed side-by-side comparison of IAUT300N08S5N012ATMA2 by Infineon and IAUS300N08S5N012 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ Active

Specification Comparison

Parameter IAUT300N08S5N012ATMA2 IAUS300N08S5N012
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.20 $3.88
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V —
Transistor Type N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) —
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
Operating Temperature Range -55 °C to +175 °C (TJ) -55°C to +175°C
Package PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-HSOG-8-1 (Surface Mount)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance Compliant RoHS compliant (Green product)
MSL Level [DATA_NEEDED: MSL level] MSL1 (up to 260°C peak reflow)
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
Avalanche Rating — 100% Avalanche tested
Technology — OptiMOS 5 planar trench
Terminals — 8

Datasheets & Resources

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