IAUT300N08S5N012ATMA2 vs IAUS300N08S5N012 Comparación
Comparación detallada lado a lado de IAUT300N08S5N012ATMA2 por Infineon y IAUS300N08S5N012 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ ActivoInfineon
IAUS300N08S5N012 - 80V 300A 1.2mΩ OptiMOS 5 Power MOSFET | Infineon
IAUS300N08S5N012 ✓ ActivoComparación de especificaciones
| Parámetro | IAUT300N08S5N012ATMA2 | IAUS300N08S5N012 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,20 | $3,88 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™-5 80 V | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 300 A | — |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ | — |
| Maximum Power Dissipation (PD, Tc) | 375 W | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Rango de temperatura de funcionamiento | -55 °C to +175 °C (TJ) | -55°C to +175°C |
| Encapsulado | PG-HSOF-8-1 (8-pin HSOF with drain tab) | PG-HSOG-8-1 (Surface Mount) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Compliance | Compliant | RoHS compliant (Green product) |
| Nivel MSL | [DATA_NEEDED: MSL level] | MSL1 (up to 260°C peak reflow) |
| Series | — | OptiMOS 5 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC | — | 300 A |
| On-Resistance R<sub>DS(on)</sub> Max at VGS=10V | — | 1.2 mΩ typical |
| Gate-Source Threshold Voltage VGS(th) | — | 3.8 V at 275 µA |
| Power Dissipation (PD) at TC | — | 375 W |
| Avalanche Rating | — | 100% Avalanche tested |
| Technology | — | OptiMOS 5 planar trench |
| Terminals | — | 8 |