IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
MPN: IAUT300N08S5N012ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.14 | $4.14 |
| 10 | $3.72 | $37.20 |
| 100 | $3.1 | $310.00 |
| 500 | $2.65 | $1,325.00 |
| 1,000 | $2.2 | $2,200.00 |
Drop-in alternatives for IAUT300N08S5N012ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IAUT300N08S5N012
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View Datasheet →IAUT300N08S5N012ATMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS™-5 80 V |
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 300 A |
| Pulsed Drain Current (IDM) | 1200 A (per datasheet, typical) |
| On-Resistance RDS(on) max @ VGS=10V | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | 375 W |
| Gate-to-Source Voltage (VGS) | ±20 V |
| Operating Temperature Range | -55 °C to +175 °C (TJ) |
| Package | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Compliant |
IAUT300N08S5N012ATMA2 Pin Configuration
| Pin 1 | Source (S) — Power source terminal, internally connected to pins 2-3, 5-7, and the source pad |
| Pin 2 | Source (S) — Power source terminal |
| Pin 3 | Source (S) — Power source terminal |
| Pin 4 | Gate (G) — Gate drive input; 10 V VGS typical for full enhancement |
| Pin 5 | Source (S) — Power source terminal |
| Pin 6 | Source (S) — Power source terminal |
| Pin 7 | Source (S) — Power source terminal |
| Pin 8 | Kelvin Source (KS) — Kelvin source sense pin for gate-driver ground reference, eliminating source-inductance feedback |
Safe Operating Area (SOA) - DC
Typical Applications
IAUT300N08S5N012ATMA2 is suitable for 6 applications: 12 V / 48 V Automotive Load Switch, Electric Power Steering (EPS) Inverter Stage, 48 V Mild-Hybrid DC-DC Converter (Synchronous Rectifier), Battery Disconnect / Pyrofuse Bypass Switch, Industrial High-Current Motor Drive, Automotive Braking System (Electro-Mechanical Brake).
12 V / 48 V Automotive Load Switch
The IAUT300N08S5N012ATMA2 is well-suited for high-current 12 V/48 V automotive load switches in body and chassis ECUs, where its 300 A continuous drain rating and 1.2 mΩ RDS(on) at 10 V VGS minimize conduction loss when energizing high-power loads such as PTC heaters, e-chassis pumps, and 48 V e-turbo actuators. Placed between the battery bus and the load, the device gates with a standard 10 V gate drive from an automotive gate-driver IC; the ultra-low on-resistance drops only ~360 mV at 300 A, keeping dissipation under 108 W and well within the 375 W PD rating. AEC-Q101 qualification and 175 °C TJ max ensure reliability under hood and chassis thermal stress.
Recommended
Electric Power Steering (EPS) Inverter Stage
In an EPS inverter, the IAUT300N08S5N012ATMA2 acts as the synchronous-rectifier or brake chopper switch in a three-phase bridge driving the steering motor, leveraging its 300 A continuous current capability to handle peak torque demands during parking maneuvers and high-speed lane changes. The 80 V VDS provides margin above the 12 V bus plus back-EMF transients from motor regeneration, while the 1.2 mΩ RDS(on) reduces thermal stress and extends ECU lifetime in safety-critical steering. The AEC-Q101 qualification is mandatory for chassis-domain electronics where functional-safety ISO 26262 ASIL-D applies.
Recommended
48 V Mild-Hybrid DC-DC Converter (Synchronous Rectifier)
The IAUT300N08S5N012ATMA2 functions as the low-side synchronous-rectifier MOSFET in a 48 V buck or boost DC-DC converter for mild-hybrid vehicles, where its 80 V rating gives sufficient headroom above the 36-58 V operating range and its 1.2 mΩ RDS(on) cuts conduction loss in half compared to typical 100 V parts. Operating at switching frequencies from 100 kHz to 1 MHz, the device's optimized gate charge (Qg) minimizes switching loss and keeps converter efficiency above 96 percent. PG-HSOF-8-1 packaging enables top-side cooling via the exposed drain tab bolted to a cold plate, critical for underhood 48 V converters.
Recommended
Battery Disconnect / Pyrofuse Bypass Switch
In battery management systems (BMS), the IAUT300N08S5N012ATMA2 serves as a solid-state battery disconnect switch or pyrofuse-bypass path, where its 300 A continuous current rating handles peak charge/discharge currents of 48 V lithium-ion packs in mild-hybrid and BEV architectures. The 1.2 mΩ RDS(on) keeps voltage drop during cranking events below 0.4 V at 300 A, preserving usable pack energy at low state-of-charge. AEC-Q101 and the wide -55 °C to +175 °C TJ range ensure operation across cold-start and high-temperature underhood environments.
Recommended
Industrial High-Current Motor Drive
Beyond automotive, the IAUT300N08S5N012ATMA2 also fits industrial high-current motor drives up to 80 V bus, such as AGV traction controllers, robotic arm servo amplifiers, and forklift pump inverters, where its 300 A continuous rating supports 5-15 kW peak power levels. The 80 V VDS rating is sufficient for 48 V industrial battery packs with inductive kickback margin. Designers must observe thermal derating in industrial enclosures that lack active liquid cooling; PG-HSOF-8-1's exposed drain tab accepts a bolted heatsink or direct chassis mounting for sustained high-current operation.
Recommended
Automotive Braking System (Electro-Mechanical Brake)
The IAUT300N08S5N012ATMA2 is used in electro-mechanical brake (EMB) and brake-by-wire systems as a high-current switch for the actuator H-bridge, where its AEC-Q101 automotive qualification and 1.2 mΩ RDS(on) ensure the safety-critical brake actuator receives full current without thermal runaway. The 80 V VDS rating handles inductive flyback from the brake motor windings when PWM chopping at 20 kHz. Functional-safety redundancy requires dual-MOSFET per switch position; the HSOF-8-1 footprint makes it easy to parallel two devices for 600 A combined capability while sharing a common heatsink.
Recommended
Recommended Products Summary
Engineering reference data for IAUT300N08S5N012ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUT300N08S5N012 | IPG20N06S4L14AATMA1 | ISC080N10NM6ATMA1 | BSC117N08NS5ATMA1 | BSC076N06NS3GATMA1 | IAUC100N10S5N040ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-HSOF-8-1 | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same |
| Brand | Infineon Technologies | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same | Infineon Technologies - same |
| Drain-to-Source Voltage (VDS) | 80 V | 80 V | 60 V | 100 V | 80 V | 60 V | 100 V |
| Continuous Drain Current (ID @ Tc=25°C) | 300 A | 300 A | [DATA_NEEDED] | [DATA_NEEDED] | ~120 A | [DATA_NEEDED] | ~100 A |
| On-Resistance RDS(on) @ VGS=10V | 1.2 mΩ | 1.2 mΩ | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | ~4.0 mΩ |
| Maximum Power Dissipation (PD) | 375 W | 375 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology Family | OptiMOS™-5 80 V | OptiMOS™-5 80 V | OptiMOS™ 60 V | OptiMOS™-6 100 V | OptiMOS™-5 80 V | OptiMOS™-3 60 V | OptiMOS™-5 100 V |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
Key Differentiators
- 300 A continuous drain current in PG-HSOF-8-1 - among the highest in 80 V class (vs BSC117N08NS5ATMA1)
- Ultra-low 1.2 mΩ RDS(on) at 10 V VGS (vs IAUC100N10S5N040ATMA1)
- OptiMOS™-5 80 V technology with AEC-Q101 automotive qualification (vs BSC076N06NS3GATMA1)
Design Notes
Estimated: at 300 A continuous drain current with RDS(on) = 1.2 mΩ, conduction loss is approximately I² × R = 300² × 0.0012 = 108 W. With a junction-to-case thermal resistance of approximately 0.4 °C/W (typical for PG-HSOF-8-1), the junction-to-case temperature rise alone is 108 × 0.4 = 43 °C above the case. Designers must mount the exposed drain tab to a PCB copper pour of at least 100 cm² (1 oz copper) or a bolted cold plate to keep the junction under the 175 °C maximum. Active airflow or liquid cooling is recommended for continuous 300 A operation.
Use the Kelvin-source pin (pin 8) as the gate-driver ground reference, not the power-source pins (1-3, 5-7). This eliminates the source-inductance L×dI/dt voltage spike from feeding back into the gate-drive loop, which can cause dv/dt-induced turn-on of the high-side device in a half-bridge. Place the gate-driver within 10 mm of pins 4 and 8, and route the gate trace as a 0.5 mm wide microstrip with adjacent ground return to minimize gate-loop inductance below 5 nH.
The PG-HSOF-8-1 exposed drain tab must be soldered to a continuous PCB copper land of at least 8 mm × 8 mm with thermal vias (0.3 mm drill, 1 mm pitch, plated) connecting to inner-layer copper planes. Without thermal vias, the junction-to-ambient thermal resistance rises from ~25 °C/W to over 60 °C/W, potentially causing thermal shutdown at 200 A continuous. Avoid splitting the drain copper pour - a single contiguous land prevents current crowding and hot spots under high di/dt switching.
Do not exceed the VGS = ±20 V absolute maximum gate-source voltage rating; even brief transients above 20 V can rupture the gate oxide and permanently damage the device. Use a gate-drive clamp Zener or TVS diode to protect against gate-drive supply overshoot. Also, never operate the device in linear mode (with VDS partially on) without confirming the SOA curve allows it - even brief operation outside the DC SOA can cause thermal runaway and device failure.
Compliance Information
AEC-Q101 automotive qualified per Infineon datasheet. RoHS and REACH compliant per Infineon product page. Halogen-free status not explicitly stated in the verified web data; refer to the Infineon material declaration for confirmation.
