IAUT300N08S5N012ATMA2 vs IAUS300N08S5N012 对比

详细并排对比 IAUT300N08S5N012ATMA2 出自 Infineon 和 IAUS300N08S5N012 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUT300N08S5N012ATMA2 IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N012ATMA2 ✓ 量产中

规格对比

参数 IAUT300N08S5N012ATMA2 IAUS300N08S5N012
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.20 $3.88
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™-5 80 V —
晶体管类型 N-Channel MOSFET —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID, Tc=25°C) 300 A —
Pulsed Drain Current (IDM) 1200 A (per datasheet, typical) —
On-Resistance RDS(on) max @ VGS=10V 1.2 mΩ —
Maximum Power Dissipation (PD, Tc) 375 W —
Gate-to-Source Voltage (VGS) ±20 V —
工作温度范围 -55 °C to +175 °C (TJ) -55°C to +175°C
封装 PG-HSOF-8-1 (8-pin HSOF with drain tab) PG-HSOG-8-1 (Surface Mount)
安装类型 Surface Mount Surface Mount
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS Compliance Compliant RoHS compliant (Green product)
MSL 等级 [DATA_NEEDED: MSL level] MSL1 (up to 260°C peak reflow)
Series — OptiMOS 5
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (VDS) — 80 V
Continuous Drain Current (ID) at TC — 300 A
On-Resistance R<sub>DS(on)</sub> Max at VGS=10V — 1.2 mΩ typical
Gate-Source Threshold Voltage VGS(th) — 3.8 V at 275 µA
Power Dissipation (PD) at TC — 375 W
Avalanche Rating — 100% Avalanche tested
Technology — OptiMOS 5 planar trench
Terminals — 8

数据手册与资源

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