IAUTN04S7N005ATMA1 vs IAUC120N04S6N010ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUTN04S7N005ATMA1 sa pamamagitan ng Infineon at IAUC120N04S6N010ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUTN04S7N005ATMA1 - 40V 0.44mΩ OptiMOS 7 N-MOSFET | Infineon
IAUTN04S7N005ATMA1 ✓ NakahandaInfineon
IAUC120N04S6N010ATMA1 - 40V 1mΩ 150A N-Ch OptiMOS 6 | Infineon
IAUC120N04S6N010ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUTN04S7N005ATMA1 | IAUC120N04S6N010ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™7 (40 V, Automotive) | — |
| Technology | N-Channel Trench MOSFET | OptiMOS 6 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 350 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 0.44 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Pwersang Pinahihigpit (TC=25°C) | 218 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-HSOF-8-8 (TOLL) 10 × 12 mm | PG-TDSON-8-34 (5x6 mm leadless) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes (per manufacturer datasheet) | — |
| Level ng MSL | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | 1 (per JEDEC J-STD-020, per Infineon TDSON family) |
| Gate Charge (Qg typ.) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Total Gate Charge Figure of Merit (FOM) | [DATA_NEEDED: FOM = RDS(on) × Qg] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V(BR)DSS) | — | 40 V |
| Continuous Drain Current (Id, Tc) | — | 150 A |
| Power Dissipation (Pd, Tc) | — | 150 W |
| RDS(on) at VGS=10V (typ) | — | 1.0 mΩ |
| RDS(on) at VGS=10V (max per LCSC excerpt) | — | 1.03 mΩ |
| Gate-Source Threshold (VGS(th), typ) | — | 3 V (at 90 µA) |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C (TJ, per Infineon OptiMOS 6 family) |
| Gate Drive Recommendation | — | 10 V VGS for full RDS(on) spec |
| Polarity | — | Single N-channel |