IAUZ40N06S5L050ATMA1 vs IAUZN04S7L030ATMA1 Comparison

Detailed side-by-side comparison of IAUZ40N06S5L050ATMA1 by Infineon and IAUZN04S7L030ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IAUZ40N06S5L050ATMA1 IAUZN04S7L030ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Polarity N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 60 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) [DATA_NEEDED: continuous drain current at Tc=25C] —
Drain Current at T<sub>j</sub> 90 A —
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V 5 mΩ —
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A 6.4 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 2.2 V at 29 µA —
Total Gate Charge Q<sub>G</sub> 28.2 nC —
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) 71 W —
Operating Junction Temperature -55 °C to +175 °C —
Package PG-TSDSON-8-33 (TSDSON-8) PG-TSDSON-8-44 (S3O8) 3x3 mm²
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 (super-junction N-channel) —
Automotive Qualification AEC-Q100 qualified AEC-Q101 (Automotive OptiMOS)
RoHS Status Compliant —
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25°C) — 60 A
Pulsed Drain Current (IDM, Tj) — 100 A
On-State Resistance (RDS(on), VGS=10V max) — 3.05 mΩ
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg typical]
Power Dissipation (PD, Tc=25°C) — 58 W
Operating Junction Temperature (Tj) — -55C to +175C
Technology Family — OptiMOS-7
Channel Type — N-Channel
RoHS Compliance — Compliant
MSL Level — [DATA_NEEDED: MSL rating]

Datasheets & Resources

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