IAUZ40N06S5N050ATMA1 vs BSC0993NDATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IAUZ40N06S5N050ATMA1 disebabkan oleh Infineon dan BSC0993NDATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IAUZ40N06S5N050ATMA1 BSC0993NDATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, TC) 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on), typ) 5 mΩ at VGS=10 V —
Maximum Power Dissipation (PD) 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th), typ) 1.7 V —
Technology OptiMOS 5 (Trench) OptiMOS 5 trench MOSFET
Channel Type N-Channel Enhancement Mode —
Kemasan PG-TSDSON-8-33 (3.3 x 3.3 mm) PG-TISON-8
Kiraan Pin 8 —
Jenis Pemasangan Surface Mount Surface Mount
Thermal Resistance (RthJC, max) [DATA_NEEDED: RthJC] —
Gambaran Suhu Operasi -55C to +175C -55C to +150C (junction)
Automotive Qualification AEC-Q101 Qualified —
Status RoHS Compliant Compliant
Aras MSL 1 [DATA_NEEDED: MSL level]
Packaging Tape & Reel —
Manufacturer — Infineon Technologies
Product Series — OptiMOS 5 30V
Configuration — Dual N-Channel (Array)
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) @ Ta — 17 A
Channel Mode — Enhancement
ESD Protection — Yes (integrated)
Lead-Free — Yes
Rds(on) max @ Vgs=10V — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

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